{"id":{"repo_id":"nus","oai_identifier":"oai:scholarbank.nus.edu.sg:10635/48375"},"canonical_url":"https://search.dev.ndltd.org/etd/nus/oai:scholarbank.nus.edu.sg:10635/48375","repository":{"repo_id":"nus","name":"National University of Singapore","base_url":"https://scholarbank.nus.edu.sg/oai/request"},"display":{"title":"Post-crystallisation treatment and characterisation of polycrystalline silicon thin-film solar cells on glass","abstract":"Polycrystalline silicon on glass is a possible thin-film material for photovoltaic applications. This thesis performs a detailed experimental investigation of the impacts of two post-crystallisation process steps (rapid thermal annealing and hydrogenation) on the electrical properties of poly-Si on glass diodes. The optimum RTA peak temperature is determined to be about 1000 &176;C, whereby this process shifts the p-n junction by 0.55 microns into the absorber layer. By optimising the hydrogenation process in a reactor with four linear microwave plasma sources, the lateral non-uniformity of the open-circuit voltage is reduced to less than &177; 3% over an area of 400 cm&178;. We find that the ratio of ECV to Hall average doping concentration for most of our poly-Si films lies in the range of 1.6 to 2.2. Cross-sectional electron beam-induced current measurements reveal that the p-n junction of our textured samples is disrupted and non-conformal due to the texture features.","abstract_html":"Polycrystalline silicon on glass is a possible thin-film material for photovoltaic applications. This thesis performs a detailed experimental investigation of the impacts of two post-crystallisation process steps (rapid thermal annealing and hydrogenation) on the electrical properties of poly-Si on glass diodes. The optimum RTA peak temperature is determined to be about 1000 &176;C, whereby this process shifts the p-n junction by 0.55 microns into the absorber layer. By optimising the hydrogenation process in a reactor with four linear microwave plasma sources, the lateral non-uniformity of the open-circuit voltage is reduced to less than &177; 3% over an area of 400 cm&178;. We find that the ratio of ECV to Hall average doping concentration for most of our poly-Si films lies in the range of 1.6 to 2.2. Cross-sectional electron beam-induced current measurements reveal that the p-n junction of our textured samples is disrupted and non-conformal due to the texture features.","abstract_has_math":false,"creators":["HIDAYAT"],"institution":null,"degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2013,"date_issued":"2013-06-24","date_published":"2013-06-24","updated_at":"2026-07-24T03:30:34Z","subjects":["thin-film, polycrystalline silicon, solar cells, rapid thermal annealing, hydrogenation, characterisation"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":null,"outbound_label":null,"outbound_source":null},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["HIDAYAT"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.issued","label":"Date","values":["2013-06-24"]},{"key":"dc:relation.isreferencedby","label":"Dc Relation Isreferencedby","values":["https://scholarbank.nus.edu.sg/handle/10635/48375"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["thin-film, polycrystalline silicon, solar cells, rapid thermal annealing, hydrogenation, characterisation"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://scholarbank.nus.edu.sg/bitstreams/f53ce3c4-eb3a-4b15-b221-15aa6e4ce9c7/download"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Polycrystalline silicon on glass is a possible thin-film material for photovoltaic applications. This thesis performs a detailed experimental investigation of the impacts of two post-crystallisation process steps (rapid thermal annealing and hydrogenation) on the electrical properties of poly-Si on glass diodes. The optimum RTA peak temperature is determined to be about 1000 &176;C, whereby this process shifts the p-n junction by 0.55 microns into the absorber layer. By optimising the hydrogenation process in a reactor with four linear microwave plasma sources, the lateral non-uniformity of the open-circuit voltage is reduced to less than &177; 3% over an area of 400 cm&178;. We find that the ratio of ECV to Hall average doping concentration for most of our poly-Si films lies in the range of 1.6 to 2.2. Cross-sectional electron beam-induced current measurements reveal that the p-n junction of our textured samples is disrupted and non-conformal due to the texture features."]},{"key":"dc:format.checksum.md5","label":"Dc Format Checksum Md5","values":["6c2526e891c5a687a169aaa5711aae0a","cfc96d4cc3f05ced92a46d5754519d92"]},{"key":"dc:title","label":"Title","values":["Post-crystallisation treatment and characterisation of polycrystalline silicon thin-film solar cells on glass"]}]}],"canonical_facts":{"dc:creator":["HIDAYAT"],"dc:date.issued":["2013-06-24"],"dc:description.abstract":["Polycrystalline silicon on glass is a possible thin-film material for photovoltaic applications. This thesis performs a detailed experimental investigation of the impacts of two post-crystallisation process steps (rapid thermal annealing and hydrogenation) on the electrical properties of poly-Si on glass diodes. The optimum RTA peak temperature is determined to be about 1000 &176;C, whereby this process shifts the p-n junction by 0.55 microns into the absorber layer. By optimising the hydrogenation process in a reactor with four linear microwave plasma sources, the lateral non-uniformity of the open-circuit voltage is reduced to less than &177; 3% over an area of 400 cm&178;. We find that the ratio of ECV to Hall average doping concentration for most of our poly-Si films lies in the range of 1.6 to 2.2. Cross-sectional electron beam-induced current measurements reveal that the p-n junction of our textured samples is disrupted and non-conformal due to the texture features."],"dc:format.checksum.md5":["6c2526e891c5a687a169aaa5711aae0a","cfc96d4cc3f05ced92a46d5754519d92"],"dc:identifier.uri":["https://scholarbank.nus.edu.sg/bitstreams/f53ce3c4-eb3a-4b15-b221-15aa6e4ce9c7/download"],"dc:relation.isreferencedby":["https://scholarbank.nus.edu.sg/handle/10635/48375"],"dc:subject":["thin-film, polycrystalline silicon, solar cells, rapid thermal annealing, hydrogenation, characterisation"],"dc:title":["Post-crystallisation treatment and characterisation of polycrystalline silicon thin-film solar cells on glass"],"dc:type":["Thesis"]},"updated_at":"2026-07-24T03:30:34Z"}