{"id":{"repo_id":"nus","oai_identifier":"oai:scholarbank.nus.edu.sg:10635/47511"},"canonical_url":"https://search.dev.ndltd.org/etd/nus/oai:scholarbank.nus.edu.sg:10635/47511","repository":{"repo_id":"nus","name":"National University of Singapore","base_url":"https://scholarbank.nus.edu.sg/oai/request"},"display":{"title":"Fabrication and characterization of advanced ALGaN/GaN high-electron-mobility transistors","abstract":"In this thesis, advanced process technologies, such as in situ surface passivation, strain engineering, and complementary metal-oxide-semiconductor (CMOS) compatible gold-free process, were developed to enhance the electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Chapter 2 reports the development of in situ vacuum anneal and SiH4 or SiH4+NH3 passivation to realize high quality metal gate/high-k dielectric stacks on GaN surface using a multi-chamber metal-organic chemical vapor deposition (MOCVD) gate cluster tool. Chapter 3 demonstrates the realization of AlGaN/GaN MOS-HEMTs with in situ vacuum anneal and SiH4 passivation. Chapter 4 explores the integration of a diamond-like carbon (DLC) stress liner with high intrinsic compressive stress on AlGaN/GaN MOS-HEMTs to further improve device performance. Chapter 5 reports high voltage AlGaN/GaN-on-silicon and on-sapphire MOS-HEMTs using a CMOS compatible gold-free process. AlGaN/GaN-on-sapphire MOS-HEMTs achieved the highest breakdown of 1400 V, as compared to other gold-free AlGaN/GaN HEMTs reported to-date.","abstract_html":"In this thesis, advanced process technologies, such as in situ surface passivation, strain engineering, and complementary metal-oxide-semiconductor (CMOS) compatible gold-free process, were developed to enhance the electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Chapter 2 reports the development of in situ vacuum anneal and SiH4 or SiH4+NH3 passivation to realize high quality metal gate/high-k dielectric stacks on GaN surface using a multi-chamber metal-organic chemical vapor deposition (MOCVD) gate cluster tool. Chapter 3 demonstrates the realization of AlGaN/GaN MOS-HEMTs with in situ vacuum anneal and SiH4 passivation. Chapter 4 explores the integration of a diamond-like carbon (DLC) stress liner with high intrinsic compressive stress on AlGaN/GaN MOS-HEMTs to further improve device performance. Chapter 5 reports high voltage AlGaN/GaN-on-silicon and on-sapphire MOS-HEMTs using a CMOS compatible gold-free process. AlGaN/GaN-on-sapphire MOS-HEMTs achieved the highest breakdown of 1400 V, as compared to other gold-free AlGaN/GaN HEMTs reported to-date.","abstract_has_math":false,"creators":["LIU XINKE"],"institution":null,"degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2013,"date_issued":"2013-05-31","date_published":"2013-05-31","updated_at":"2026-07-24T03:31:13Z","subjects":["AlGaN/GaN MOSHEMTs, passivation, strain engineering, CMOS-compatible gold-free process, high voltage"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":null,"outbound_label":null,"outbound_source":null},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["LIU XINKE"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.issued","label":"Date","values":["2013-05-31"]},{"key":"dc:relation.isreferencedby","label":"Dc Relation Isreferencedby","values":["https://scholarbank.nus.edu.sg/handle/10635/47511"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["AlGaN/GaN MOSHEMTs, passivation, strain engineering, CMOS-compatible gold-free process, high voltage"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://scholarbank.nus.edu.sg/bitstreams/495a12dc-071a-4d7e-ba07-e67356d1a586/download"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["In this thesis, advanced process technologies, such as in situ surface passivation, strain engineering, and complementary metal-oxide-semiconductor (CMOS) compatible gold-free process, were developed to enhance the electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Chapter 2 reports the development of in situ vacuum anneal and SiH4 or SiH4+NH3 passivation to realize high quality metal gate/high-k dielectric stacks on GaN surface using a multi-chamber metal-organic chemical vapor deposition (MOCVD) gate cluster tool. Chapter 3 demonstrates the realization of AlGaN/GaN MOS-HEMTs with in situ vacuum anneal and SiH4 passivation. Chapter 4 explores the integration of a diamond-like carbon (DLC) stress liner with high intrinsic compressive stress on AlGaN/GaN MOS-HEMTs to further improve device performance. Chapter 5 reports high voltage AlGaN/GaN-on-silicon and on-sapphire MOS-HEMTs using a CMOS compatible gold-free process. AlGaN/GaN-on-sapphire MOS-HEMTs achieved the highest breakdown of 1400 V, as compared to other gold-free AlGaN/GaN HEMTs reported to-date."]},{"key":"dc:format.checksum.md5","label":"Dc Format Checksum Md5","values":["f4ec98e4704c4eee48a7086203ec1c7e","c40c62053ffcc514258da6a5b388c9c8"]},{"key":"dc:title","label":"Title","values":["Fabrication and characterization of advanced ALGaN/GaN high-electron-mobility transistors"]}]}],"canonical_facts":{"dc:creator":["LIU XINKE"],"dc:date.issued":["2013-05-31"],"dc:description.abstract":["In this thesis, advanced process technologies, such as in situ surface passivation, strain engineering, and complementary metal-oxide-semiconductor (CMOS) compatible gold-free process, were developed to enhance the electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Chapter 2 reports the development of in situ vacuum anneal and SiH4 or SiH4+NH3 passivation to realize high quality metal gate/high-k dielectric stacks on GaN surface using a multi-chamber metal-organic chemical vapor deposition (MOCVD) gate cluster tool. Chapter 3 demonstrates the realization of AlGaN/GaN MOS-HEMTs with in situ vacuum anneal and SiH4 passivation. Chapter 4 explores the integration of a diamond-like carbon (DLC) stress liner with high intrinsic compressive stress on AlGaN/GaN MOS-HEMTs to further improve device performance. Chapter 5 reports high voltage AlGaN/GaN-on-silicon and on-sapphire MOS-HEMTs using a CMOS compatible gold-free process. AlGaN/GaN-on-sapphire MOS-HEMTs achieved the highest breakdown of 1400 V, as compared to other gold-free AlGaN/GaN HEMTs reported to-date."],"dc:format.checksum.md5":["f4ec98e4704c4eee48a7086203ec1c7e","c40c62053ffcc514258da6a5b388c9c8"],"dc:identifier.uri":["https://scholarbank.nus.edu.sg/bitstreams/495a12dc-071a-4d7e-ba07-e67356d1a586/download"],"dc:relation.isreferencedby":["https://scholarbank.nus.edu.sg/handle/10635/47511"],"dc:subject":["AlGaN/GaN MOSHEMTs, passivation, strain engineering, CMOS-compatible gold-free process, high voltage"],"dc:title":["Fabrication and characterization of advanced ALGaN/GaN high-electron-mobility transistors"],"dc:type":["Thesis"]},"updated_at":"2026-07-24T03:31:13Z"}