ADVANCED MATERIALS DEVELOPMENT AND MANUFACTURING - DEVELOPMENT OF THERMALLY STABLE THIN FILMS WITH HIGH STRESS TUNABILITY
As Moore’s Law continues to push its limit, the semiconductor industry is heading towards 3D integrated circuits by stacking die or NAND cells vertically. The higher number of film deposition from NAND cell stacking result in higher compressive wafer bow of Production Silicon Wafers which is undesirable in manufacturing process flow due to downstream process and/or yield downside. With increasing vertical scaling up of 3D NAND cells as part of NAND development strategy/roadmap, wafer bow management is becoming increasingly critical for integration requirement, manufacturing feasibility and backend packaging specification. The development of thermally stable, high stress film can be used to deposit on the frontside or backside of silicon wafers as sacrificial film to compensate the overall wafer bow to meet manufacturing or integration requirement of the manufacturing process. High stress thermal stability for ideal films is required to maintain the stress compensation through the manufacturing process flow which involve high temperature processes. This work will focus on extensive thin film material characterization to determine the correlation of thin film composition with film’s stress thermal stability and to establish a model for high stress thermal stability optimization and film stress tuning.
3D NAND; Micron; High Stress; Thermal Stability
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