{"id":{"repo_id":"nus","oai_identifier":"oai:scholarbank.nus.edu.sg:10635/154031"},"canonical_url":"https://search.dev.ndltd.org/etd/nus/oai:scholarbank.nus.edu.sg:10635/154031","repository":{"repo_id":"nus","name":"National University of Singapore","base_url":"https://scholarbank.nus.edu.sg/oai/request"},"display":{"title":"GATE DIELECTRIC BREAKDOWN PHYSICAL ANALYSIS AND STUDIES -2D MODELING OF BREAKDOWN THERMAL EFFECT","abstract":"Ultra thin gate oxide reliability has been an important aspect in the sub-micron fabrication process. Structural deformation at the gate oxide is indeed important to understand the soft breakdown (SBD) and hard breakdown (HBD) mechanisms of a narrow channel MOSFET. During HBD or under favorable condition of SBD, silicon epitaxy growth is observed at the cathode side of the MOSFET. This epitaxy growth is named dielectric breakdown-induced epitaxy (DBIE). DBIE is a likely physical mechanism for the degradation and breakdown of ultra-thin silicon dioxide under constant voltage stress conditions. Therefore, to assure the reliability demands, the physics of the dielectric breakdown-induced epitaxy (DBIE) phenomenon must be fully understood. In this project, a theoretical model has been built based on the electro-thermal migration phenomenon to predict the size of DBIE under the influence of current density and temperature. TEM micrograph observations during the formation of DBIE have been verified by constructing a 2-D transient thermal model using Finite Element Analysis (ANSYS®).","abstract_html":"Ultra thin gate oxide reliability has been an important aspect in the sub-micron fabrication process. Structural deformation at the gate oxide is indeed important to understand the soft breakdown (SBD) and hard breakdown (HBD) mechanisms of a narrow channel MOSFET. During HBD or under favorable condition of SBD, silicon epitaxy growth is observed at the cathode side of the MOSFET. This epitaxy growth is named dielectric breakdown-induced epitaxy (DBIE). DBIE is a likely physical mechanism for the degradation and breakdown of ultra-thin silicon dioxide under constant voltage stress conditions. Therefore, to assure the reliability demands, the physics of the dielectric breakdown-induced epitaxy (DBIE) phenomenon must be fully understood. In this project, a theoretical model has been built based on the electro-thermal migration phenomenon to predict the size of DBIE under the influence of current density and temperature. TEM micrograph observations during the formation of DBIE have been verified by constructing a 2-D transient thermal model using Finite Element Analysis (ANSYS®).","abstract_has_math":false,"creators":["KHO SING TZE"],"institution":null,"degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2003,"date_issued":"2003","date_published":"2003","updated_at":"2026-07-24T03:32:56Z","subjects":["DBIE","Electro-thermal migration","theoretical model","transient thermal model"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":null,"outbound_label":null,"outbound_source":null},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["KHO SING TZE"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.issued","label":"Date","values":["2003"]},{"key":"dc:relation.isreferencedby","label":"Dc Relation Isreferencedby","values":["https://scholarbank.nus.edu.sg/handle/10635/154031"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["DBIE","Electro-thermal migration","theoretical model","transient thermal model"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://scholarbank.nus.edu.sg/bitstreams/26bdc196-0e61-4ba5-89b9-81d966ed3a9e/download"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Ultra thin gate oxide reliability has been an important aspect in the sub-micron fabrication process. Structural deformation at the gate oxide is indeed important to understand the soft breakdown (SBD) and hard breakdown (HBD) mechanisms of a narrow channel MOSFET. During HBD or under favorable condition of SBD, silicon epitaxy growth is observed at the cathode side of the MOSFET. This epitaxy growth is named dielectric breakdown-induced epitaxy (DBIE). DBIE is a likely physical mechanism for the degradation and breakdown of ultra-thin silicon dioxide under constant voltage stress conditions. Therefore, to assure the reliability demands, the physics of the dielectric breakdown-induced epitaxy (DBIE) phenomenon must be fully understood. In this project, a theoretical model has been built based on the electro-thermal migration phenomenon to predict the size of DBIE under the influence of current density and temperature. 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This epitaxy growth is named dielectric breakdown-induced epitaxy (DBIE). DBIE is a likely physical mechanism for the degradation and breakdown of ultra-thin silicon dioxide under constant voltage stress conditions. Therefore, to assure the reliability demands, the physics of the dielectric breakdown-induced epitaxy (DBIE) phenomenon must be fully understood. In this project, a theoretical model has been built based on the electro-thermal migration phenomenon to predict the size of DBIE under the influence of current density and temperature. TEM micrograph observations during the formation of DBIE have been verified by constructing a 2-D transient thermal model using Finite Element Analysis (ANSYS®)."],"dc:format.checksum.md5":["fccbd1bb8ea9a299f7006f56ebcf4dab","c1c499513c104eade1c6fbc8971c8c50"],"dc:identifier.uri":["https://scholarbank.nus.edu.sg/bitstreams/26bdc196-0e61-4ba5-89b9-81d966ed3a9e/download"],"dc:relation.isreferencedby":["https://scholarbank.nus.edu.sg/handle/10635/154031"],"dc:subject":["DBIE","Electro-thermal migration","theoretical model","transient thermal model"],"dc:title":["GATE DIELECTRIC BREAKDOWN PHYSICAL ANALYSIS AND STUDIES -2D MODELING OF BREAKDOWN THERMAL EFFECT"],"dc:type":["Thesis"]},"updated_at":"2026-07-24T03:32:56Z"}