{"id":{"repo_id":"nus","oai_identifier":"oai:scholarbank.nus.edu.sg:10635/13628"},"canonical_url":"https://search.dev.ndltd.org/etd/nus/oai:scholarbank.nus.edu.sg:10635/13628","repository":{"repo_id":"nus","name":"National University of Singapore","base_url":"https://scholarbank.nus.edu.sg/oai/request"},"display":{"title":"Fabrication and characterization of AIGaN/GaN HEMTs","abstract":"The processing procedure for the formation of ohmic contact using Ti/Al/Pd/Au, and Schottky contact using Pd/Au on AlGaN/GaN HEMT has been developed. A specific contact resistance of 1.08 x 10-7 W cm2 was achieved and an Schottky barrier height of 1.12eV was reached. Large dimension AlGaN/GaN HEMT devices with two different epilayer designs have been fabricated. A maximum drain current of 800mA/mm and a peak transconductance of 165mS/mm was achieved with the first HEMT design compared to 500mA/mm and 106mS/mm for the second HEMT design. Long-term heat treatment on the HEMT was found to degrade the surface morphology of the Pd/Au gate but improved the ohmic behavior of the HEMT. A set of photomask for fabrication of high power, high frequency HEMTs has been designed. A new epilayer design was developed to achieve a multi-channel AlGaN/GaN HEMT using piezoelectric polarization effect. Simulation showed better dc performances than HEMTs with conventional design.","abstract_html":"The processing procedure for the formation of ohmic contact using Ti/Al/Pd/Au, and Schottky contact using Pd/Au on AlGaN/GaN HEMT has been developed. A specific contact resistance of 1.08 x 10-7 W cm2 was achieved and an Schottky barrier height of 1.12eV was reached. Large dimension AlGaN/GaN HEMT devices with two different epilayer designs have been fabricated. A maximum drain current of 800mA/mm and a peak transconductance of 165mS/mm was achieved with the first HEMT design compared to 500mA/mm and 106mS/mm for the second HEMT design. Long-term heat treatment on the HEMT was found to degrade the surface morphology of the Pd/Au gate but improved the ohmic behavior of the HEMT. A set of photomask for fabrication of high power, high frequency HEMTs has been designed. A new epilayer design was developed to achieve a multi-channel AlGaN/GaN HEMT using piezoelectric polarization effect. Simulation showed better dc performances than HEMTs with conventional design.","abstract_has_math":false,"creators":["HOY KIN MENG, DERRICK"],"institution":null,"degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2004,"date_issued":"2004-01-21","date_published":"2004-01-21","updated_at":"2026-07-24T03:31:13Z","subjects":["GaN, HEMT, Ohmic, Schottky, rf photomask, Simulation"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":null,"outbound_label":null,"outbound_source":null},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["HOY KIN MENG, DERRICK"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.issued","label":"Date","values":["2004-01-21"]},{"key":"dc:relation.isreferencedby","label":"Dc Relation Isreferencedby","values":["https://scholarbank.nus.edu.sg/handle/10635/13628"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["GaN, HEMT, Ohmic, Schottky, rf photomask, Simulation"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://scholarbank.nus.edu.sg/bitstreams/6a785eba-4aef-4dd1-9467-490192e918ff/download","https://scholarbank.nus.edu.sg/bitstreams/cd7ce95f-7d48-4b8a-b03b-e32ce1888284/download","https://scholarbank.nus.edu.sg/bitstreams/8d9ce782-b707-4b75-a10d-e7d4daec8c7b/download"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["The processing procedure for the formation of ohmic contact using Ti/Al/Pd/Au, and Schottky contact using Pd/Au on AlGaN/GaN HEMT has been developed. A specific contact resistance of 1.08 x 10-7 W cm2 was achieved and an Schottky barrier height of 1.12eV was reached. Large dimension AlGaN/GaN HEMT devices with two different epilayer designs have been fabricated. A maximum drain current of 800mA/mm and a peak transconductance of 165mS/mm was achieved with the first HEMT design compared to 500mA/mm and 106mS/mm for the second HEMT design. Long-term heat treatment on the HEMT was found to degrade the surface morphology of the Pd/Au gate but improved the ohmic behavior of the HEMT. A set of photomask for fabrication of high power, high frequency HEMTs has been designed. A new epilayer design was developed to achieve a multi-channel AlGaN/GaN HEMT using piezoelectric polarization effect. Simulation showed better dc performances than HEMTs with conventional design."]},{"key":"dc:format.checksum.md5","label":"Dc Format Checksum Md5","values":["269c17d699850a066f2b81028d214827","39357be2585af4a5342e70ec4ed0bce7","28878b33f5ef8303bae4252f9c59d5ba","ae76350aa5e2f08c5702de3ed353144c","4162c4a22d4717b0f687810c8697763c","cb6c7ca6e338019cb4e8471aefe88dcb"]},{"key":"dc:title","label":"Title","values":["Fabrication and characterization of AIGaN/GaN HEMTs"]}]}],"canonical_facts":{"dc:creator":["HOY KIN MENG, DERRICK"],"dc:date.issued":["2004-01-21"],"dc:description.abstract":["The processing procedure for the formation of ohmic contact using Ti/Al/Pd/Au, and Schottky contact using Pd/Au on AlGaN/GaN HEMT has been developed. A specific contact resistance of 1.08 x 10-7 W cm2 was achieved and an Schottky barrier height of 1.12eV was reached. Large dimension AlGaN/GaN HEMT devices with two different epilayer designs have been fabricated. A maximum drain current of 800mA/mm and a peak transconductance of 165mS/mm was achieved with the first HEMT design compared to 500mA/mm and 106mS/mm for the second HEMT design. Long-term heat treatment on the HEMT was found to degrade the surface morphology of the Pd/Au gate but improved the ohmic behavior of the HEMT. A set of photomask for fabrication of high power, high frequency HEMTs has been designed. A new epilayer design was developed to achieve a multi-channel AlGaN/GaN HEMT using piezoelectric polarization effect. Simulation showed better dc performances than HEMTs with conventional design."],"dc:format.checksum.md5":["269c17d699850a066f2b81028d214827","39357be2585af4a5342e70ec4ed0bce7","28878b33f5ef8303bae4252f9c59d5ba","ae76350aa5e2f08c5702de3ed353144c","4162c4a22d4717b0f687810c8697763c","cb6c7ca6e338019cb4e8471aefe88dcb"],"dc:identifier.uri":["https://scholarbank.nus.edu.sg/bitstreams/6a785eba-4aef-4dd1-9467-490192e918ff/download","https://scholarbank.nus.edu.sg/bitstreams/cd7ce95f-7d48-4b8a-b03b-e32ce1888284/download","https://scholarbank.nus.edu.sg/bitstreams/8d9ce782-b707-4b75-a10d-e7d4daec8c7b/download"],"dc:relation.isreferencedby":["https://scholarbank.nus.edu.sg/handle/10635/13628"],"dc:subject":["GaN, HEMT, Ohmic, Schottky, rf photomask, Simulation"],"dc:title":["Fabrication and characterization of AIGaN/GaN HEMTs"],"dc:type":["Thesis"]},"updated_at":"2026-07-24T03:31:13Z"}