A THEORETICAL MODEL OF SPIN-TRANSPORT IN FERROMAGNET-SEMICONDUCTOR HYBRID STRUCTURES WHICH TAKES INTO ACCOUNT THE EFFECTS OF INTERFACE RESISTANCE HAS BEEN PRESENTED. SPIN-INJECTION EFFICIENCY AND MAGNETORESISTANCE WHICH ARE THE KEY PARAMETERS IN ANY SPINTRONICS DEVICE ARE STUDIED IN DETAIL. IT WAS FOUND THAT INTERFACIAL RESISTANCE WHICH IS DUE TO SPIN-SELECTIVE TUNNEL BARRIER AT BOTH THE INTERFACES OF HYBRID STRUCTURE PLAYS A CRUCIAL ROLE IN DETERMINING THE SPIN-INJECTION EFFICIENCY AND MAGNETORESISTANCE WHICH ARE THE PRINCIPAL REQUIREMENTS OF ANY SPINTRONICS DEVICE. TO ANALYZE THE SPIN-INJECTION EFFICIENCY IN THE STRUCTURE, A SELF-CONSISTENT MODEL HAS ALSO BEEN DEVELOPED WHICH CONSIDERS THE SPIN-TRANSPORT TO BE DIFFUSIVE IN THE BULK OF THE FERROMAGNET AND BALLISTIC WITHIN THE VICINITY OF INTERFACES. SPIN-DEPENDENT PROPERTIES ARE STUDIED AS A FUNCTION OF BARRIER-HEIGHTS AND IT WAS FOUND THAT SPIN-DEPENDENT INTERFACIAL RESISTANCE, SPIN-INJECTION EFFICIENCY AND MAGNETORESISTANCE INCRE","abstract_html":"<P>A THEORETICAL MODEL OF SPIN-TRANSPORT IN FERROMAGNET-SEMICONDUCTOR HYBRID STRUCTURES WHICH TAKES INTO ACCOUNT THE EFFECTS OF INTERFACE RESISTANCE HAS BEEN PRESENTED. SPIN-INJECTION EFFICIENCY AND MAGNETORESISTANCE WHICH ARE THE KEY PARAMETERS IN ANY SPINTRONICS DEVICE ARE STUDIED IN DETAIL. IT WAS FOUND THAT INTERFACIAL RESISTANCE WHICH IS DUE TO SPIN-SELECTIVE TUNNEL BARRIER AT BOTH THE INTERFACES OF HYBRID STRUCTURE PLAYS A CRUCIAL ROLE IN DETERMINING THE SPIN-INJECTION EFFICIENCY AND MAGNETORESISTANCE WHICH ARE THE PRINCIPAL REQUIREMENTS OF ANY SPINTRONICS DEVICE. TO ANALYZE THE SPIN-INJECTION EFFICIENCY IN THE STRUCTURE, A SELF-CONSISTENT MODEL HAS ALSO BEEN DEVELOPED WHICH CONSIDERS THE SPIN-TRANSPORT TO BE DIFFUSIVE IN THE BULK OF THE FERROMAGNET AND BALLISTIC WITHIN THE VICINITY OF INTERFACES. SPIN-DEPENDENT PROPERTIES ARE STUDIED AS A FUNCTION OF BARRIER-HEIGHTS AND IT WAS FOUND THAT SPIN-DEPENDENT INTERFACIAL RESISTANCE, SPIN-INJECTION EFFICIENCY AND MAGNETORESISTANCE INCRE","abstract_has_math":false,"creators":["AGRAWAL SAURABH"],"institution":null,"degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2006,"date_issued":"2006-01-21","date_published":"2006-01-21","updated_at":"2026-07-24T03:32:04Z","subjects":["Interfacial Resistance, Spin-injection, Spin-polarization, Spin-transport, Spin-diffusion, Magnetoresistance"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":null,"outbound_label":null,"outbound_source":null},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["AGRAWAL SAURABH"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.issued","label":"Date","values":["2006-01-21"]},{"key":"dc:relation.isreferencedby","label":"Dc Relation Isreferencedby","values":["https://scholarbank.nus.edu.sg/handle/10635/134397"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Interfacial Resistance, Spin-injection, Spin-polarization, Spin-transport, Spin-diffusion, Magnetoresistance"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://scholarbank.nus.edu.sg/bitstreams/028af5af-63eb-4424-88d0-55e17d7fe043/download"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["
A THEORETICAL MODEL OF SPIN-TRANSPORT IN FERROMAGNET-SEMICONDUCTOR HYBRID STRUCTURES WHICH TAKES INTO ACCOUNT THE EFFECTS OF INTERFACE RESISTANCE HAS BEEN PRESENTED. SPIN-INJECTION EFFICIENCY AND MAGNETORESISTANCE WHICH ARE THE KEY PARAMETERS IN ANY SPINTRONICS DEVICE ARE STUDIED IN DETAIL. IT WAS FOUND THAT INTERFACIAL RESISTANCE WHICH IS DUE TO SPIN-SELECTIVE TUNNEL BARRIER AT BOTH THE INTERFACES OF HYBRID STRUCTURE PLAYS A CRUCIAL ROLE IN DETERMINING THE SPIN-INJECTION EFFICIENCY AND MAGNETORESISTANCE WHICH ARE THE PRINCIPAL REQUIREMENTS OF ANY SPINTRONICS DEVICE. TO ANALYZE THE SPIN-INJECTION EFFICIENCY IN THE STRUCTURE, A SELF-CONSISTENT MODEL HAS ALSO BEEN DEVELOPED WHICH CONSIDERS THE SPIN-TRANSPORT TO BE DIFFUSIVE IN THE BULK OF THE FERROMAGNET AND BALLISTIC WITHIN THE VICINITY OF INTERFACES. SPIN-DEPENDENT PROPERTIES ARE STUDIED AS A FUNCTION OF BARRIER-HEIGHTS AND IT WAS FOUND THAT SPIN-DEPENDENT INTERFACIAL RESISTANCE, SPIN-INJECTION EFFICIENCY AND MAGNETORESISTANCE INCRE"]},{"key":"dc:format.checksum.md5","label":"Dc Format Checksum Md5","values":["d00789a70a8d073475cb93ec4e3d9bce","63185ef6af89a6ce70573ee3974999a5"]},{"key":"dc:title","label":"Title","values":["Theory and simulation of magnetism and spin transport in semiconductors"]}]}],"canonical_facts":{"dc:creator":["AGRAWAL SAURABH"],"dc:date.issued":["2006-01-21"],"dc:description.abstract":["
A THEORETICAL MODEL OF SPIN-TRANSPORT IN FERROMAGNET-SEMICONDUCTOR HYBRID STRUCTURES WHICH TAKES INTO ACCOUNT THE EFFECTS OF INTERFACE RESISTANCE HAS BEEN PRESENTED. SPIN-INJECTION EFFICIENCY AND MAGNETORESISTANCE WHICH ARE THE KEY PARAMETERS IN ANY SPINTRONICS DEVICE ARE STUDIED IN DETAIL. IT WAS FOUND THAT INTERFACIAL RESISTANCE WHICH IS DUE TO SPIN-SELECTIVE TUNNEL BARRIER AT BOTH THE INTERFACES OF HYBRID STRUCTURE PLAYS A CRUCIAL ROLE IN DETERMINING THE SPIN-INJECTION EFFICIENCY AND MAGNETORESISTANCE WHICH ARE THE PRINCIPAL REQUIREMENTS OF ANY SPINTRONICS DEVICE. TO ANALYZE THE SPIN-INJECTION EFFICIENCY IN THE STRUCTURE, A SELF-CONSISTENT MODEL HAS ALSO BEEN DEVELOPED WHICH CONSIDERS THE SPIN-TRANSPORT TO BE DIFFUSIVE IN THE BULK OF THE FERROMAGNET AND BALLISTIC WITHIN THE VICINITY OF INTERFACES. SPIN-DEPENDENT PROPERTIES ARE STUDIED AS A FUNCTION OF BARRIER-HEIGHTS AND IT WAS FOUND THAT SPIN-DEPENDENT INTERFACIAL RESISTANCE, SPIN-INJECTION EFFICIENCY AND MAGNETORESISTANCE INCRE"],"dc:format.checksum.md5":["d00789a70a8d073475cb93ec4e3d9bce","63185ef6af89a6ce70573ee3974999a5"],"dc:identifier.uri":["https://scholarbank.nus.edu.sg/bitstreams/028af5af-63eb-4424-88d0-55e17d7fe043/download"],"dc:relation.isreferencedby":["https://scholarbank.nus.edu.sg/handle/10635/134397"],"dc:subject":["Interfacial Resistance, Spin-injection, Spin-polarization, Spin-transport, Spin-diffusion, Magnetoresistance"],"dc:title":["Theory and simulation of magnetism and spin transport in semiconductors"],"dc:type":["Thesis"]},"updated_at":"2026-07-24T03:32:04Z"}