Characterisation and optimisation of alternating current thin film electroluminescent displays
This Thesis presents research undertaken to investigate the electro-optical characterisation and optimisation of Thin Film Electroluminescent (TFEL) devices and Laterally Emitting Thin Film Electroluminescent (LETFEL) devices with respect to device lifetime and aging. Post deposition localised laser annealing as an alternative to thermal annealing has been previously described in the literature. The effects of laser annealing on various devices is investigated and described within this Thesis. In particular, the novel use of ArF laser annealing at a wavelength of 193nm as a post deposition annealing process for ZnS:Mn thin films deposited by RF magnetron sputtering has been presented and compared to KrF laser annealing (248nm wavelength). Additionally the use of KrF laser annealing on a new deposition method, High Target Utilisation Sputtering (HiTUS) is presented, with successful results obtained on heat sensitive substrates. Results presented show that the use of KrF produces slightly better performance in respect to maximum luminance, however the use of ArF laser annealing can allow for achievement of higher luminance at lower applied voltages.
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