{"id":{"repo_id":"njit","oai_identifier":"oai:digitalcommons.njit.edu:theses-1523"},"canonical_url":"https://search.dev.ndltd.org/etd/njit/oai:digitalcommons.njit.edu:theses-1523","repository":{"repo_id":"njit","name":"NJIT","base_url":"https://digitalcommons.njit.edu/do/oai/"},"display":{"title":"Transport properties of NC-Si / A-SiO2 superlattices and their applications in non-volatile memory","abstract":"The dc current-voltage characteristics, ac conductivity, equivalent capacitance, photocurrent transients of the n-Si/nanocrystalline-Si/amorphous-SiO_2/Al heterostructure were measured in a wide range of illumination intensities for temperatures from 4.2 K to 300 K. Electrical transport properties of the nanocrystalline-Si/amorphous-SiO_2 superlattices were discussed. The observed domination of the electron component at negative bias and of the hole component at positive bias above 0.7 V in a dc current allows to separate transport features of electrons and holes in a nc-Si/a-SiO_2 superlattices. Transport of electrons is thermally activated if potential barrier at c-Si/SL interface of 70 meV is suppressed and several activation energies for different temperature regions were determined. Transport of holes is well described by the Fowler-Nordheim tunneling theory for a number of illumination intensities in the measured temperature region. Tunneling mechanism is additionally supported by an independence of the photocurrent decay on temperature. Two maxima in ac conductivity at 0 V and at 0.8 V were related to trap-assisted conductivity and to alignment of energy levels in the heterostructure (photoconductivity resonance), respectively. Time-dependent photocurrent measurements proved a decrease of the photoconductivity due to a decreasing mobility of holes and misalignment of the energy levels at bias above O.8V. Density of traps of 3.5x10^{11}cm^{-2} and trapping time of 30 us were found. An application of nanocrystalline Si/amporphous SiO_2 superlattices in non-volatile memory devices is discussed.","abstract_html":"The dc current-voltage characteristics, ac conductivity, equivalent capacitance, photocurrent transients of the n-Si/nanocrystalline-Si/amorphous-SiO_2/Al heterostructure were measured in a wide range of illumination intensities for temperatures from 4.2 K to 300 K. Electrical transport properties of the nanocrystalline-Si/amorphous-SiO_2 superlattices were discussed. The observed domination of the electron component at negative bias and of the hole component at positive bias above 0.7 V in a dc current allows to separate transport features of electrons and holes in a nc-Si/a-SiO_2 superlattices. Transport of electrons is thermally activated if potential barrier at c-Si/SL interface of 70 meV is suppressed and several activation energies for different temperature regions were determined. Transport of holes is well described by the Fowler-Nordheim tunneling theory for a number of illumination intensities in the measured temperature region. Tunneling mechanism is additionally supported by an independence of the photocurrent decay on temperature. Two maxima in ac conductivity at 0 V and at 0.8 V were related to trap-assisted conductivity and to alignment of energy levels in the heterostructure (photoconductivity resonance), respectively. Time-dependent photocurrent measurements proved a decrease of the photoconductivity due to a decreasing mobility of holes and misalignment of the energy levels at bias above O.8V. Density of traps of 3.5x10^{11}cm^{-2} and trapping time of 30 us were found. An application of nanocrystalline Si/amporphous SiO_2 superlattices in non-volatile memory devices is discussed.","abstract_has_math":false,"creators":["Koneru, Lakshmi Susmitha"],"institution":null,"degree_name":"Master of Science in Electrical Engineering - (M.S.)","degree_level":null,"degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Leonid Tsybeskov","Durgamadhab Misra","Marek Sosnowski"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2003,"date_issued":"2003-08-31T07:00:00Z","date_published":"2003-08-31T07:00:00Z","updated_at":"2026-07-24T03:23:27Z","subjects":["Electrical transport properties","Nanocrystalline-Si/amorphous-SiO2 superlattices","Electrical and Electronics"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://digitalcommons.njit.edu/theses/524","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Leonid Tsybeskov","Durgamadhab Misra","Marek Sosnowski"]},{"key":"dc:creator","label":"Author","values":["Koneru, Lakshmi Susmitha"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science in Electrical Engineering - (M.S.)"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Electrical transport properties","Nanocrystalline-Si/amorphous-SiO2 superlattices","Electrical and Electronics"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://digitalcommons.njit.edu/theses/524"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["The dc current-voltage characteristics, ac conductivity, equivalent capacitance, photocurrent transients of the n-Si/nanocrystalline-Si/amorphous-SiO_2/Al heterostructure were measured in a wide range of illumination intensities for temperatures from 4.2 K to 300 K. Electrical transport properties of the nanocrystalline-Si/amorphous-SiO_2 superlattices were discussed. The observed domination of the electron component at negative bias and of the hole component at positive bias above 0.7 V in a dc current allows to separate transport features of electrons and holes in a nc-Si/a-SiO_2 superlattices. Transport of electrons is thermally activated if potential barrier at c-Si/SL interface of 70 meV is suppressed and several activation energies for different temperature regions were determined. Transport of holes is well described by the Fowler-Nordheim tunneling theory for a number of illumination intensities in the measured temperature region. Tunneling mechanism is additionally supported by an independence of the photocurrent decay on temperature. Two maxima in ac conductivity at 0 V and at 0.8 V were related to trap-assisted conductivity and to alignment of energy levels in the heterostructure (photoconductivity resonance), respectively. Time-dependent photocurrent measurements proved a decrease of the photoconductivity due to a decreasing mobility of holes and misalignment of the energy levels at bias above O.8V. Density of traps of 3.5x10^{11}cm^{-2} and trapping time of 30 us were found. An application of nanocrystalline Si/amporphous SiO_2 superlattices in non-volatile memory devices is discussed."]},{"key":"dc:title","label":"Title","values":["Transport properties of NC-Si / A-SiO2 superlattices and their applications in non-volatile memory"]}]}],"canonical_facts":{"dc:contributor":["Leonid Tsybeskov","Durgamadhab Misra","Marek Sosnowski"],"dc:creator":["Koneru, Lakshmi Susmitha"],"dc:description.abstract":["The dc current-voltage characteristics, ac conductivity, equivalent capacitance, photocurrent transients of the n-Si/nanocrystalline-Si/amorphous-SiO_2/Al heterostructure were measured in a wide range of illumination intensities for temperatures from 4.2 K to 300 K. Electrical transport properties of the nanocrystalline-Si/amorphous-SiO_2 superlattices were discussed. The observed domination of the electron component at negative bias and of the hole component at positive bias above 0.7 V in a dc current allows to separate transport features of electrons and holes in a nc-Si/a-SiO_2 superlattices. Transport of electrons is thermally activated if potential barrier at c-Si/SL interface of 70 meV is suppressed and several activation energies for different temperature regions were determined. Transport of holes is well described by the Fowler-Nordheim tunneling theory for a number of illumination intensities in the measured temperature region. Tunneling mechanism is additionally supported by an independence of the photocurrent decay on temperature. Two maxima in ac conductivity at 0 V and at 0.8 V were related to trap-assisted conductivity and to alignment of energy levels in the heterostructure (photoconductivity resonance), respectively. Time-dependent photocurrent measurements proved a decrease of the photoconductivity due to a decreasing mobility of holes and misalignment of the energy levels at bias above O.8V. Density of traps of 3.5x10^{11}cm^{-2} and trapping time of 30 us were found. An application of nanocrystalline Si/amporphous SiO_2 superlattices in non-volatile memory devices is discussed."],"dc:identifier":["https://digitalcommons.njit.edu/theses/524"],"dc:subject":["Electrical transport properties","Nanocrystalline-Si/amorphous-SiO2 superlattices","Electrical and Electronics"],"dc:title":["Transport properties of NC-Si / A-SiO2 superlattices and their applications in non-volatile memory"],"dc:type":["Thesis"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_name":["Master of Science in Electrical Engineering - (M.S.)"]},"updated_at":"2026-07-24T03:23:27Z"}