{"id":{"repo_id":"njit","oai_identifier":"oai:digitalcommons.njit.edu:theses-1518"},"canonical_url":"https://search.dev.ndltd.org/etd/njit/oai:digitalcommons.njit.edu:theses-1518","repository":{"repo_id":"njit","name":"NJIT","base_url":"https://digitalcommons.njit.edu/do/oai/"},"display":{"title":"Pulsed laser ablation deposition and optical characterization of hexagonal-wurtzite silicon","abstract":"Hexagonal-wurtzite silicon phase silicon is an unusual polymorph of silicon with potentially useful electro-optical properties. Previous studies using a simple deposition system demonstrated that laser ablation of the standard cubic-diamond silicon produces droplets containing hexagonal-wurtzite crystallites. In order to study the process parameters and to deposit larger hexagonal crystals, a new pulsed laser ablation system with variable parameters was assembled and tested. Deposition expenments were performed in high vacuum with different laser pulse power. Raman spectroscopy showed that the new system successfully produces hexagonal-wurtzite silicon. The droplet size distributions, measured with an optical microscope, were found to depend on the laser pulse power, target-substrate separation and the target rotation. The droplets of hexagonal crystallites varied in diameter from less than a micron to 49 micrometers. The deposited material was examined using scanning electron microscopy and optically characterized by white light transmission.","abstract_html":"Hexagonal-wurtzite silicon phase silicon is an unusual polymorph of silicon with potentially useful electro-optical properties. Previous studies using a simple deposition system demonstrated that laser ablation of the standard cubic-diamond silicon produces droplets containing hexagonal-wurtzite crystallites. In order to study the process parameters and to deposit larger hexagonal crystals, a new pulsed laser ablation system with variable parameters was assembled and tested. Deposition expenments were performed in high vacuum with different laser pulse power. Raman spectroscopy showed that the new system successfully produces hexagonal-wurtzite silicon. The droplet size distributions, measured with an optical microscope, were found to depend on the laser pulse power, target-substrate separation and the target rotation. The droplets of hexagonal crystallites varied in diameter from less than a micron to 49 micrometers. The deposited material was examined using scanning electron microscopy and optically characterized by white light transmission.","abstract_has_math":false,"creators":["Cada, Berzelius Ybanez"],"institution":null,"degree_name":"Master of Science in Electrical Engineering - (M.S.)","degree_level":null,"degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Marek Sosnowski","Haim Grebel","Zafar Iqbal"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2004,"date_issued":"2004-01-31T08:00:00Z","date_published":"2004-01-31T08:00:00Z","updated_at":"2026-07-24T03:23:27Z","subjects":["Pulsed laser alation","Hexagonal-wurtzite silicon","Electrical and Electronics"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://digitalcommons.njit.edu/theses/519","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Marek Sosnowski","Haim Grebel","Zafar Iqbal"]},{"key":"dc:creator","label":"Author","values":["Cada, Berzelius Ybanez"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science in Electrical Engineering - (M.S.)"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Pulsed laser alation","Hexagonal-wurtzite silicon","Electrical and Electronics"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://digitalcommons.njit.edu/theses/519"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Hexagonal-wurtzite silicon phase silicon is an unusual polymorph of silicon with potentially useful electro-optical properties. Previous studies using a simple deposition system demonstrated that laser ablation of the standard cubic-diamond silicon produces droplets containing hexagonal-wurtzite crystallites. In order to study the process parameters and to deposit larger hexagonal crystals, a new pulsed laser ablation system with variable parameters was assembled and tested. Deposition expenments were performed in high vacuum with different laser pulse power. Raman spectroscopy showed that the new system successfully produces hexagonal-wurtzite silicon. The droplet size distributions, measured with an optical microscope, were found to depend on the laser pulse power, target-substrate separation and the target rotation. The droplets of hexagonal crystallites varied in diameter from less than a micron to 49 micrometers. The deposited material was examined using scanning electron microscopy and optically characterized by white light transmission."]},{"key":"dc:title","label":"Title","values":["Pulsed laser ablation deposition and optical characterization of hexagonal-wurtzite silicon"]}]}],"canonical_facts":{"dc:contributor":["Marek Sosnowski","Haim Grebel","Zafar Iqbal"],"dc:creator":["Cada, Berzelius Ybanez"],"dc:description.abstract":["Hexagonal-wurtzite silicon phase silicon is an unusual polymorph of silicon with potentially useful electro-optical properties. Previous studies using a simple deposition system demonstrated that laser ablation of the standard cubic-diamond silicon produces droplets containing hexagonal-wurtzite crystallites. In order to study the process parameters and to deposit larger hexagonal crystals, a new pulsed laser ablation system with variable parameters was assembled and tested. Deposition expenments were performed in high vacuum with different laser pulse power. Raman spectroscopy showed that the new system successfully produces hexagonal-wurtzite silicon. The droplet size distributions, measured with an optical microscope, were found to depend on the laser pulse power, target-substrate separation and the target rotation. The droplets of hexagonal crystallites varied in diameter from less than a micron to 49 micrometers. The deposited material was examined using scanning electron microscopy and optically characterized by white light transmission."],"dc:identifier":["https://digitalcommons.njit.edu/theses/519"],"dc:subject":["Pulsed laser alation","Hexagonal-wurtzite silicon","Electrical and Electronics"],"dc:title":["Pulsed laser ablation deposition and optical characterization of hexagonal-wurtzite silicon"],"dc:type":["Thesis"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_name":["Master of Science in Electrical Engineering - (M.S.)"]},"updated_at":"2026-07-24T03:23:27Z"}