{"id":{"repo_id":"njit","oai_identifier":"oai:digitalcommons.njit.edu:theses-1281"},"canonical_url":"https://search.dev.ndltd.org/etd/njit/oai:digitalcommons.njit.edu:theses-1281","repository":{"repo_id":"njit","name":"NJIT","base_url":"https://digitalcommons.njit.edu/do/oai/"},"display":{"title":"Koh etching of silicon","abstract":"In this research, a series of comparative etching experiments on silicon wafers have been carried out using potassium hydroxide (KOH) for different experimental etching conditions for concentration, temperature and time on (100) orientation p-type silicon wafers. Besides the basic etching conditions, the position of the immersed wafer also has unpredictable effect on the etching process. This may be attributed to the relative contact position between the surface of the immersed wafer and the flow patterns of the stirred etching solution. The surface morphology analysis indicates that the specific position of the wafer, with respect to the flow of the etchant, can lead to a higher quality of uniformly rough (100) crystal face. The lowest reflectivity of etched sample is determined by using reflectivity measurements. The study reveals that, besides conventional etching conditions, the etching positions, which can be easily disregarded, are also potential conditions that have significant influence on the etching results; this may become a principal condition for etching of silicon by KOH.","abstract_html":"In this research, a series of comparative etching experiments on silicon wafers have been carried out using potassium hydroxide (KOH) for different experimental etching conditions for concentration, temperature and time on (100) orientation p-type silicon wafers. Besides the basic etching conditions, the position of the immersed wafer also has unpredictable effect on the etching process. This may be attributed to the relative contact position between the surface of the immersed wafer and the flow patterns of the stirred etching solution. The surface morphology analysis indicates that the specific position of the wafer, with respect to the flow of the etchant, can lead to a higher quality of uniformly rough (100) crystal face. The lowest reflectivity of etched sample is determined by using reflectivity measurements. The study reveals that, besides conventional etching conditions, the etching positions, which can be easily disregarded, are also potential conditions that have significant influence on the etching results; this may become a principal condition for etching of silicon by KOH.","abstract_has_math":false,"creators":["Wang, Ying"],"institution":null,"degree_name":"Master of Science in Materials Science and Engineering - (M.S.)","degree_level":null,"degree_discipline":"Committee for the Interdisciplinary Program in Materials Science and Engineering","degree_department":null,"school":null,"contributors":["N. M. Ravindra","Angelo J. Perna","Edip Niver"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2016,"date_issued":"2016-05-31T07:00:00Z","date_published":"2016-05-31T07:00:00Z","updated_at":"2026-07-24T03:22:34Z","subjects":["Silicon wafers","Potassium hydroxide etching","Materials Science and Engineering"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://digitalcommons.njit.edu/theses/282","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["N. M. Ravindra","Angelo J. Perna","Edip Niver"]},{"key":"dc:creator","label":"Author","values":["Wang, Ying"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Committee for the Interdisciplinary Program in Materials Science and Engineering"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science in Materials Science and Engineering - (M.S.)"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Silicon wafers","Potassium hydroxide etching","Materials Science and Engineering"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://digitalcommons.njit.edu/theses/282"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["In this research, a series of comparative etching experiments on silicon wafers have been carried out using potassium hydroxide (KOH) for different experimental etching conditions for concentration, temperature and time on (100) orientation p-type silicon wafers. Besides the basic etching conditions, the position of the immersed wafer also has unpredictable effect on the etching process. This may be attributed to the relative contact position between the surface of the immersed wafer and the flow patterns of the stirred etching solution. The surface morphology analysis indicates that the specific position of the wafer, with respect to the flow of the etchant, can lead to a higher quality of uniformly rough (100) crystal face. The lowest reflectivity of etched sample is determined by using reflectivity measurements. The study reveals that, besides conventional etching conditions, the etching positions, which can be easily disregarded, are also potential conditions that have significant influence on the etching results; this may become a principal condition for etching of silicon by KOH."]},{"key":"dc:title","label":"Title","values":["Koh etching of silicon"]}]}],"canonical_facts":{"dc:contributor":["N. M. Ravindra","Angelo J. Perna","Edip Niver"],"dc:creator":["Wang, Ying"],"dc:description.abstract":["In this research, a series of comparative etching experiments on silicon wafers have been carried out using potassium hydroxide (KOH) for different experimental etching conditions for concentration, temperature and time on (100) orientation p-type silicon wafers. Besides the basic etching conditions, the position of the immersed wafer also has unpredictable effect on the etching process. This may be attributed to the relative contact position between the surface of the immersed wafer and the flow patterns of the stirred etching solution. The surface morphology analysis indicates that the specific position of the wafer, with respect to the flow of the etchant, can lead to a higher quality of uniformly rough (100) crystal face. The lowest reflectivity of etched sample is determined by using reflectivity measurements. The study reveals that, besides conventional etching conditions, the etching positions, which can be easily disregarded, are also potential conditions that have significant influence on the etching results; this may become a principal condition for etching of silicon by KOH."],"dc:identifier":["https://digitalcommons.njit.edu/theses/282"],"dc:subject":["Silicon wafers","Potassium hydroxide etching","Materials Science and Engineering"],"dc:title":["Koh etching of silicon"],"dc:type":["Thesis"],"thesis:degree_discipline":["Committee for the Interdisciplinary Program in Materials Science and Engineering"],"thesis:degree_name":["Master of Science in Materials Science and Engineering - (M.S.)"]},"updated_at":"2026-07-24T03:22:34Z"}