{"id":{"repo_id":"njit","oai_identifier":"oai:digitalcommons.njit.edu:theses-1240"},"canonical_url":"https://search.dev.ndltd.org/etd/njit/oai:digitalcommons.njit.edu:theses-1240","repository":{"repo_id":"njit","name":"NJIT","base_url":"https://digitalcommons.njit.edu/do/oai/"},"display":{"title":"Processing and characterization of graphene and graphene on silicon","abstract":"Graphene has become a promising material for applications in many areas including electronic devices, batteries and space crafts. Although it has a bright future, the commercial production of graphene has not yet been realized. In this thesis, an overview of the properties and applications of graphene is presented. The early research of preparing graphene and its composites is summarized, which gives the basis to synthesize graphene and improve the process. In this study, graphene oxide (GO) and graphene have been successfully made using graphite; graphene layer has been coated on the surface of a silicon wafer. The resulting specimens are characterized by Raman spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy to identify the composition of the resulting films. Current-Voltage (I-V) measurements are performed to determine the electrical properties of graphene on silicon. Conclusions are made based on the test results.","abstract_html":"Graphene has become a promising material for applications in many areas including electronic devices, batteries and space crafts. Although it has a bright future, the commercial production of graphene has not yet been realized. In this thesis, an overview of the properties and applications of graphene is presented. The early research of preparing graphene and its composites is summarized, which gives the basis to synthesize graphene and improve the process. In this study, graphene oxide (GO) and graphene have been successfully made using graphite; graphene layer has been coated on the surface of a silicon wafer. The resulting specimens are characterized by Raman spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy to identify the composition of the resulting films. Current-Voltage (I-V) measurements are performed to determine the electrical properties of graphene on silicon. Conclusions are made based on the test results.","abstract_has_math":false,"creators":["Peng, Cheng"],"institution":null,"degree_name":"Master of Science in Materials Science and Engineering - (M.S.)","degree_level":null,"degree_discipline":"Committee for the Interdisciplinary Program in Materials Science and Engineering","degree_department":null,"school":null,"contributors":["N. M. Ravindra","Michael Jaffe","Peter Kaufman"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-05-31T07:00:00Z","date_published":"2015-05-31T07:00:00Z","updated_at":"2026-07-24T03:22:34Z","subjects":["Graphene","Graphene processing","Materials Science and Engineering"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://digitalcommons.njit.edu/theses/241","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["N. M. 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Although it has a bright future, the commercial production of graphene has not yet been realized. In this thesis, an overview of the properties and applications of graphene is presented. The early research of preparing graphene and its composites is summarized, which gives the basis to synthesize graphene and improve the process. In this study, graphene oxide (GO) and graphene have been successfully made using graphite; graphene layer has been coated on the surface of a silicon wafer. The resulting specimens are characterized by Raman spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy to identify the composition of the resulting films. Current-Voltage (I-V) measurements are performed to determine the electrical properties of graphene on silicon. Conclusions are made based on the test results."]},{"key":"dc:title","label":"Title","values":["Processing and characterization of graphene and graphene on silicon"]}]}],"canonical_facts":{"dc:contributor":["N. M. Ravindra","Michael Jaffe","Peter Kaufman"],"dc:creator":["Peng, Cheng"],"dc:description.abstract":["Graphene has become a promising material for applications in many areas including electronic devices, batteries and space crafts. Although it has a bright future, the commercial production of graphene has not yet been realized. In this thesis, an overview of the properties and applications of graphene is presented. The early research of preparing graphene and its composites is summarized, which gives the basis to synthesize graphene and improve the process. In this study, graphene oxide (GO) and graphene have been successfully made using graphite; graphene layer has been coated on the surface of a silicon wafer. The resulting specimens are characterized by Raman spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy to identify the composition of the resulting films. Current-Voltage (I-V) measurements are performed to determine the electrical properties of graphene on silicon. Conclusions are made based on the test results."],"dc:identifier":["https://digitalcommons.njit.edu/theses/241"],"dc:subject":["Graphene","Graphene processing","Materials Science and Engineering"],"dc:title":["Processing and characterization of graphene and graphene on silicon"],"dc:type":["Thesis"],"thesis:degree_discipline":["Committee for the Interdisciplinary Program in Materials Science and Engineering"],"thesis:degree_name":["Master of Science in Materials Science and Engineering - (M.S.)"]},"updated_at":"2026-07-24T03:22:34Z"}