{"id":{"repo_id":"njit","oai_identifier":"oai:digitalcommons.njit.edu:theses-1127"},"canonical_url":"https://search.dev.ndltd.org/etd/njit/oai:digitalcommons.njit.edu:theses-1127","repository":{"repo_id":"njit","name":"NJIT","base_url":"https://digitalcommons.njit.edu/do/oai/"},"display":{"title":"Three-dimensional magnetic field sensor in IBM 0.18μm CMOS technology","abstract":"This work presents a compact three-dimensional Magnetic Field Sensor (MFS) designed in standard Complementary Metal-Oxide-Semiconductor (CMOS) technology. A circular Vertical Hall Device (VHD) for horizontal magnetic field detection and a split- drain Horizontal Hall Device (HHD) for the vertical magnetic field detection are integrated to implement the three-dimensional M FS. This merged design has the advantage of smaller area and lower power consumption. The sensitivity of the vertical hall device (ring-shaped magneto-resistor) and the horizontal hall device (Split-Drain Magnetic Field-Effect Transistor (SD-MAGFET)) is estimated as 0.11V/T and 2.88V/T respectively. The vertical direction of the magnetic field detection demonstrates a higher sensitivity. A high gain cascode differential amplifier is integrated with the sensor to further amplify the magnetic signal.","abstract_html":"This work presents a compact three-dimensional Magnetic Field Sensor (MFS) designed in standard Complementary Metal-Oxide-Semiconductor (CMOS) technology. A circular Vertical Hall Device (VHD) for horizontal magnetic field detection and a split- drain Horizontal Hall Device (HHD) for the vertical magnetic field detection are integrated to implement the three-dimensional M FS. This merged design has the advantage of smaller area and lower power consumption. The sensitivity of the vertical hall device (ring-shaped magneto-resistor) and the horizontal hall device (Split-Drain Magnetic Field-Effect Transistor (SD-MAGFET)) is estimated as 0.11V/T and 2.88V/T respectively. The vertical direction of the magnetic field detection demonstrates a higher sensitivity. A high gain cascode differential amplifier is integrated with the sensor to further amplify the magnetic signal.","abstract_has_math":false,"creators":["Wang, Gang"],"institution":null,"degree_name":"Master of Science in Electrical Engineering - (M.S.)","degree_level":null,"degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Durgamadhab Misra","Marek Sosnowski","Edwin Hou"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012-05-31T07:00:00Z","date_published":"2012-05-31T07:00:00Z","updated_at":"2026-07-24T03:22:26Z","subjects":["3D magnetic field sensor","Complementary metal-oxide-semiconductor","Electrical and Electronics"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://digitalcommons.njit.edu/theses/128","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Durgamadhab Misra","Marek Sosnowski","Edwin Hou"]},{"key":"dc:creator","label":"Author","values":["Wang, Gang"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science in Electrical Engineering - (M.S.)"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["3D magnetic field sensor","Complementary metal-oxide-semiconductor","Electrical and Electronics"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://digitalcommons.njit.edu/theses/128"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["This work presents a compact three-dimensional Magnetic Field Sensor (MFS) designed in standard Complementary Metal-Oxide-Semiconductor (CMOS) technology. A circular Vertical Hall Device (VHD) for horizontal magnetic field detection and a split- drain Horizontal Hall Device (HHD) for the vertical magnetic field detection are integrated to implement the three-dimensional M FS. This merged design has the advantage of smaller area and lower power consumption. The sensitivity of the vertical hall device (ring-shaped magneto-resistor) and the horizontal hall device (Split-Drain Magnetic Field-Effect Transistor (SD-MAGFET)) is estimated as 0.11V/T and 2.88V/T respectively. The vertical direction of the magnetic field detection demonstrates a higher sensitivity. A high gain cascode differential amplifier is integrated with the sensor to further amplify the magnetic signal."]},{"key":"dc:title","label":"Title","values":["Three-dimensional magnetic field sensor in IBM 0.18μm CMOS technology"]}]}],"canonical_facts":{"dc:contributor":["Durgamadhab Misra","Marek Sosnowski","Edwin Hou"],"dc:creator":["Wang, Gang"],"dc:description.abstract":["This work presents a compact three-dimensional Magnetic Field Sensor (MFS) designed in standard Complementary Metal-Oxide-Semiconductor (CMOS) technology. A circular Vertical Hall Device (VHD) for horizontal magnetic field detection and a split- drain Horizontal Hall Device (HHD) for the vertical magnetic field detection are integrated to implement the three-dimensional M FS. This merged design has the advantage of smaller area and lower power consumption. The sensitivity of the vertical hall device (ring-shaped magneto-resistor) and the horizontal hall device (Split-Drain Magnetic Field-Effect Transistor (SD-MAGFET)) is estimated as 0.11V/T and 2.88V/T respectively. The vertical direction of the magnetic field detection demonstrates a higher sensitivity. A high gain cascode differential amplifier is integrated with the sensor to further amplify the magnetic signal."],"dc:identifier":["https://digitalcommons.njit.edu/theses/128"],"dc:subject":["3D magnetic field sensor","Complementary metal-oxide-semiconductor","Electrical and Electronics"],"dc:title":["Three-dimensional magnetic field sensor in IBM 0.18μm CMOS technology"],"dc:type":["Thesis"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_name":["Master of Science in Electrical Engineering - (M.S.)"]},"updated_at":"2026-07-24T03:22:26Z"}