{"id":{"repo_id":"njit","oai_identifier":"oai:digitalcommons.njit.edu:theses-1007"},"canonical_url":"https://search.dev.ndltd.org/etd/njit/oai:digitalcommons.njit.edu:theses-1007","repository":{"repo_id":"njit","name":"NJIT","base_url":"https://digitalcommons.njit.edu/do/oai/"},"display":{"title":"Electrical, electronic and optical properties of MoSe2 and WSe2","abstract":"Transition-metal dichalcogenides (TMDC) crystals have emerged as a new class of semiconductors that display distinctive properties at monolayer thickness. Their electrical, electronic and optical properties are of particular interest and importance for applications in optoelectronics as light emitters, detectors, and photovoltaic devices. Monolayer MoSe_2 and WSe_2 have an intrinsic band-gap in the visible region of the solar spectrum (400nm - 700nm) which makes them distinct from other 2-D materials like graphene. In this study, the electrical, electronic and optical properties of monolayer and bulk MoSe_2 and WSe_2 are studied. The electronic band structures are presented for monolayer and bulk MoSe_2 and WSe_2. The optical properties of MoSe_2 and WSe_2 comprises of the determination and analysis of the spectral properties of these materials, at monolayer and bulk, in the range of 1.50 - 3.0 eV by MATLAB simulations. The optical band gaps of TMDC monolayers have been simulated from their spectral dependence of the absorption coefficient. The optical properties of these materials on silicon, gold and fused silica substrates are simulated.","abstract_html":"Transition-metal dichalcogenides (TMDC) crystals have emerged as a new class of semiconductors that display distinctive properties at monolayer thickness. Their electrical, electronic and optical properties are of particular interest and importance for applications in optoelectronics as light emitters, detectors, and photovoltaic devices. Monolayer MoSe_2 and WSe_2 have an intrinsic band-gap in the visible region of the solar spectrum (400nm - 700nm) which makes them distinct from other 2-D materials like graphene. In this study, the electrical, electronic and optical properties of monolayer and bulk MoSe_2 and WSe_2 are studied. The electronic band structures are presented for monolayer and bulk MoSe_2 and WSe_2. The optical properties of MoSe_2 and WSe_2 comprises of the determination and analysis of the spectral properties of these materials, at monolayer and bulk, in the range of 1.50 - 3.0 eV by MATLAB simulations. The optical band gaps of TMDC monolayers have been simulated from their spectral dependence of the absorption coefficient. The optical properties of these materials on silicon, gold and fused silica substrates are simulated.","abstract_has_math":false,"creators":["Rassay, Sushant Shashikant"],"institution":null,"degree_name":"Master of Science in Materials Science and Engineering - (M.S.)","degree_level":null,"degree_discipline":"Committee for the Interdisciplinary Program in Materials Science and Engineering","degree_department":null,"school":null,"contributors":["N. M. Ravindra","Yuanwei Zhang","Michael Jaffe"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2017,"date_issued":"2017-01-31T08:00:00Z","date_published":"2017-01-31T08:00:00Z","updated_at":"2026-07-24T03:22:01Z","subjects":["Semiconductors","Transition-metal dichalcogenides crystals","Optoelectronics","Materials Science and Engineering"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://digitalcommons.njit.edu/theses/8","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["N. M. Ravindra","Yuanwei Zhang","Michael Jaffe"]},{"key":"dc:creator","label":"Author","values":["Rassay, Sushant Shashikant"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Committee for the Interdisciplinary Program in Materials Science and Engineering"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science in Materials Science and Engineering - (M.S.)"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Semiconductors","Transition-metal dichalcogenides crystals","Optoelectronics","Materials Science and Engineering"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://digitalcommons.njit.edu/theses/8"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Transition-metal dichalcogenides (TMDC) crystals have emerged as a new class of semiconductors that display distinctive properties at monolayer thickness. Their electrical, electronic and optical properties are of particular interest and importance for applications in optoelectronics as light emitters, detectors, and photovoltaic devices. Monolayer MoSe_2 and WSe_2 have an intrinsic band-gap in the visible region of the solar spectrum (400nm - 700nm) which makes them distinct from other 2-D materials like graphene. In this study, the electrical, electronic and optical properties of monolayer and bulk MoSe_2 and WSe_2 are studied. The electronic band structures are presented for monolayer and bulk MoSe_2 and WSe_2. The optical properties of MoSe_2 and WSe_2 comprises of the determination and analysis of the spectral properties of these materials, at monolayer and bulk, in the range of 1.50 - 3.0 eV by MATLAB simulations. The optical band gaps of TMDC monolayers have been simulated from their spectral dependence of the absorption coefficient. The optical properties of these materials on silicon, gold and fused silica substrates are simulated."]},{"key":"dc:title","label":"Title","values":["Electrical, electronic and optical properties of MoSe2 and WSe2"]}]}],"canonical_facts":{"dc:contributor":["N. M. Ravindra","Yuanwei Zhang","Michael Jaffe"],"dc:creator":["Rassay, Sushant Shashikant"],"dc:description.abstract":["Transition-metal dichalcogenides (TMDC) crystals have emerged as a new class of semiconductors that display distinctive properties at monolayer thickness. Their electrical, electronic and optical properties are of particular interest and importance for applications in optoelectronics as light emitters, detectors, and photovoltaic devices. Monolayer MoSe_2 and WSe_2 have an intrinsic band-gap in the visible region of the solar spectrum (400nm - 700nm) which makes them distinct from other 2-D materials like graphene. In this study, the electrical, electronic and optical properties of monolayer and bulk MoSe_2 and WSe_2 are studied. The electronic band structures are presented for monolayer and bulk MoSe_2 and WSe_2. The optical properties of MoSe_2 and WSe_2 comprises of the determination and analysis of the spectral properties of these materials, at monolayer and bulk, in the range of 1.50 - 3.0 eV by MATLAB simulations. The optical band gaps of TMDC monolayers have been simulated from their spectral dependence of the absorption coefficient. The optical properties of these materials on silicon, gold and fused silica substrates are simulated."],"dc:identifier":["https://digitalcommons.njit.edu/theses/8"],"dc:subject":["Semiconductors","Transition-metal dichalcogenides crystals","Optoelectronics","Materials Science and Engineering"],"dc:title":["Electrical, electronic and optical properties of MoSe2 and WSe2"],"dc:type":["Thesis"],"thesis:degree_discipline":["Committee for the Interdisciplinary Program in Materials Science and Engineering"],"thesis:degree_name":["Master of Science in Materials Science and Engineering - (M.S.)"]},"updated_at":"2026-07-24T03:22:01Z"}