Nonlinear optical properties of novel nanostructured ion implanted laser ablated silicon using femtosecond pulse excitation

The study of the nonlinear optical properties of novel nanostructured ion implanted and laser ablation of Silicon is motivated by the need for materials that exhibit large values of the real part of the third order nonlinear susceptibility ([chi]^{(3)}_{Re}). This property is essential for light controlled phase or refractive index modulation at low power, where the optical properties are used for optical switching devices. Previous nanosecond (ns) measurements indicated values of-2.8 x 10 ^{-5}; esu ( [gamma] = 532 nm) for [chi]^{(3)}_{Re}. The characterization of nonlinear optical properties of the samples was studied by the Z-scan techniques using ~ 100 fs pulses. The Z-scan technique is a relatively simple and direct measurement of both the real and imaginary part of [chi]^{(3)}, where the nonlinear refractive index (n _2) is related to [chi]^{(3)}_{Re} and the nonlinear absorption ( [beta] ) to [chi]^{(3)} _{Im} Femtosecond pulse excitation measurements were performed to study ultrafast dynamics by inducing nonlinear optical changes, such as photo-induced absorption and measuring the nonlinear response. For fast optical switching applications, a fast and relatively large electronic nonlinearity is required.

Name thesis:degree_name

Doctor of Philosophy in Applied Physics - (Ph.D.)

Discipline thesis:degree_discipline

Federated Physics Department

Year

2003

Author dc:creator

• Lalanne, Elaine Nicole

Contributors dc:contributor

• Anthony M. Johnson
• John Francis Federici
• Haim Grebel

• nonlinear optical properties
• ultrafast optics
• Si nanostructured ion implant
• laser ablated Si microstructure
• nonlinear refractive index
• Other Physics

Repository record dc:identifier

https://digitalcommons.njit.edu/dissertations/580

OAI identifier oai:identifier

oai:digitalcommons.njit.edu:dissertations-1635