Electronic, thermoelectric and optical properties of vanadium oxides: VO2, V2O3 and V2O5

Correlated electrons in vanadium oxides are responsible for their extreme sensitivity to external stimuli such as pressure, temperature or doping. As a result, several vanadium oxides undergo insulator-to-metal phase transition (IMT) accompanied by structural change. Unlike vanadium pentoxide (V_3O_3), vanadium dioxide (VO_3) and vanadium sesquioxide (V_3O_3) show I MT in their bulk phases. In this study, we have performed one electron Kohn-Sham electronic band-structure calculations of VO_3, V_3O_3 and V_2O_5 in both metallic and insulating phases, implementing a full ab-initio simulation package based on Density Functional Theory (DFT), Plane Waves and Pseudopotentials (PPs). Electronic band structures are found to be influenced by crystal structure, crystal field splitting and strong hybridization between O2p and V3d bands. "Intermediate bands", with narrow band widths, lying just below the higher conduction bands, are observed in V_2O_5 which play a critical role in optical and thermoelectric processes. Similar calculations are performed for both metallic and insulating phases of bulk VO_2 and V_2O_3. Unlike in the metallic phase, bands corresponding to "valence electrons" considered in the PPs are found to be fully occupied in the insulating phases. Transport parameters such as Seebeck coefficient, electrical conductivity and thermal (electronic) conductivity are studied as a function of temperature at a fixed value of chemical potential close to the Fermi energy using Kohn-Sham band structure approach coupled with Boltzmann transport equations. Because of the layered structure and stability, only V_2O_5 shows significant thermoelectric properties. All the transport parameters have correctly depicted the highly anisotropic electrical conduction in V_2O_5. Maxima and crossovers are also seen in the temperature dependent variation of Seebeck coefficient in V_2O_5, which can be consequences of "specific details" of the band structure and anisotropic electron-phonon interactions. For understanding the influence of phase transition on transport properties, we have also studied transport parameters of VO_2 for both metallic and insulating phases. The Seebeck coefficient, at experimental critical temperature of 340K, is found to change by 18.9 uV/K during IMT, which lies within 10% of the observed discontinuity of 17.3 uV/K. Numerical methods have been used to analyze the optical properties of bulk and thin films of VO_2, V_2O_3, and V_2O_5, deposited on Al_2O_3 substrates, from infrared to vacuum ultraviolet range (up to 12 eV). The energies corresponding to the peaks in the reflectivity-energy (R-E) spectra are explained in terms of the Penn gap and the degree of anisotropy is found to be in the order of V_2O_3 < VO_2 < V_2O_5. The effective number of electrons participating in the optical transitions is described using the "sum rule". The optical absorption is found to occur followed by the transitions of d electrons as well as the transitions from O2p to V3d states. In the Honeywell microbolometer structure, the bolometer sensing element has been chosen to be VO_x, with x equal to 1.8, along with other layers of Si_3N_4, air, Al and Si. The room temperature spectral emissivity of such a layered structure is analyzed using Multi-Rad, a simulation package that utilizes thin film optics in the form of matrix method of multilayers. Calculations show that the Si_3N_4 layer provides the much desired linear performance of the VO_x based bolometer.

Name thesis:degree_name

Doctor of Philosophy in Applied Physics - (Ph.D.)

Discipline thesis:degree_discipline

Physics

Year

2015

Author dc:creator

• Lamsal, Chiranjivi

Contributors dc:contributor

• N. M. Ravindra
• Anthony Fiory
• Cristiano L. Dias

• Electronic properties
• Thermoelectric properties
• Optical properties
• Vanadium oxides
• Band structures
• Microbolometer
• Other Physics

Repository record dc:identifier

https://digitalcommons.njit.edu/dissertations/100

OAI identifier oai:identifier

oai:digitalcommons.njit.edu:dissertations-1155