Development of Thick, Relaxed AlGaN on Bulk GaN and AlN Substrates via Facet-Controlled Epitaxial Lateral Overgrowth.

Almeter, John Alexander Ross

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North Carolina State University

Development of Thick, Relaxed AlGaN on Bulk GaN and AlN Substrates via Facet-Controlled Epitaxial Lateral Overgrowth.

dc:creator Almeter, John Alexander Ross

dc:date.issued2024

Abstract

dc:description

North Carolina State University Theses Materials Science and Engineering.

Author and committee

dc:creator, dc:contributor.*

Author dc:creator: Almeter, John Alexander Ross
Advisors dc:contributor.advisor: Zlatko Sitar, Co-Chair
Ramon Collazo, Co-Chair
Claude Reynolds Jr, Member
Leda Lunardi, Member

Identifiers

dc:identifier.*

Dc Identifier Other: deg36645
OAI record oai:identifier: https://repository.lib.ncsu.edu/server/oai/request?verb=GetRecord&metadataPrefix=dim&identifier=oai%3Arepository.lib.ncsu.edu%3A1840.20%2F41678

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Harvested from: North Carolina State University
Base URL: repository.lib.ncsu.edu/server/oai/request
Last updated: 2026-08-21
Source record: OAI-PMH GetRecord

related terms

ncsu
2024

citation

Almeter, John Alexander Ross. Development of Thick, Relaxed AlGaN on Bulk GaN and AlN Substrates via Facet-Controlled Epitaxial Lateral Overgrowth.. 2024. https://www.lib.ncsu.edu/resolver/1840.20/41678

Development of Thick, Relaxed AlGaN on Bulk GaN and AlN Substrates via Facet-Controlled Epitaxial Lateral Overgrowth.

Abstract

Author and committee

Identifiers

Chain of custody

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