“A new concept of field-effect photovoltaic devices with a focus on design and fabrication of single and multi-junction solar cells using III-V materials has been shown and proved. Schottky solar cells based on metal-(insulator)-semiconductor (M-I-S) structure have been designed and fabricated using various wide bandgap semiconductors, such as GaAs and Al0.3Ga0.7As. A secondary bias layer has been introduced to the device structure, in which it creates additional band bending and subsequently depletion region at the flat band regions on the top surface of the device. It should be mentioned that the bias layer is designed to be electrically isolated from the main current collection contacts, in order to prevent the decrease in Schottky barrier height due to change in applied forward voltage or external load resistance. The electrical and optical characterization results from these Isolated Collection and Biasing Schottky Solar Cells (ICBS) show an improvement in photovoltaic response compared to conventional Schottky junction solar cells. This demonstrates the effectiveness of this novel strategy to design and fabricate high-efficiency multi-junction solar cells”--Abstract, page iii.
","abstract_html":"<p>“A new concept of field-effect photovoltaic devices with a focus on design and fabrication of single and multi-junction solar cells using III-V materials has been shown and proved. Schottky solar cells based on metal-(insulator)-semiconductor (M-I-S) structure have been designed and fabricated using various wide bandgap semiconductors, such as GaAs and Al<sub>0.3</sub>Ga<sub>0.7</sub>As. A secondary bias layer has been introduced to the device structure, in which it creates additional band bending and subsequently depletion region at the flat band regions on the top surface of the device. It should be mentioned that the bias layer is designed to be electrically isolated from the main current collection contacts, in order to prevent the decrease in Schottky barrier height due to change in applied forward voltage or external load resistance. The electrical and optical characterization results from these Isolated Collection and Biasing Schottky Solar Cells (ICBS) show an improvement in photovoltaic response compared to conventional Schottky junction solar cells. This demonstrates the effectiveness of this novel strategy to design and fabricate high-efficiency multi-junction solar cells”--Abstract, page iii.</p>","abstract_has_math":false,"creators":["Ghods, Amirhossein"],"institution":"Missouri University of Science and Technology","degree_name":"Ph. D. in Electrical Engineering","degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":null,"date_issued":"","date_published":null,"updated_at":"2026-07-24T03:18:09Z","subjects":["Atomic Layer Deposition","Field-Effect Electronics","Multijunction Solar Cells","Photovoltaics","Schottky Junctions","Semiconductor Processing","Electrical and Computer Engineering"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://scholarsmine.mst.edu/doctoral_dissertations/3126","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Ghods, Amirhossein"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:type","label":"Dc Type","values":["Dissertation - Open Access"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph. D. in Electrical Engineering"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Missouri University of Science and Technology"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Atomic Layer Deposition","Field-Effect Electronics","Multijunction Solar Cells","Photovoltaics","Schottky Junctions","Semiconductor Processing","Electrical and Computer Engineering"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://scholarsmine.mst.edu/doctoral_dissertations/3126"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["“A new concept of field-effect photovoltaic devices with a focus on design and fabrication of single and multi-junction solar cells using III-V materials has been shown and proved. Schottky solar cells based on metal-(insulator)-semiconductor (M-I-S) structure have been designed and fabricated using various wide bandgap semiconductors, such as GaAs and Al0.3Ga0.7As. A secondary bias layer has been introduced to the device structure, in which it creates additional band bending and subsequently depletion region at the flat band regions on the top surface of the device. It should be mentioned that the bias layer is designed to be electrically isolated from the main current collection contacts, in order to prevent the decrease in Schottky barrier height due to change in applied forward voltage or external load resistance. The electrical and optical characterization results from these Isolated Collection and Biasing Schottky Solar Cells (ICBS) show an improvement in photovoltaic response compared to conventional Schottky junction solar cells. This demonstrates the effectiveness of this novel strategy to design and fabricate high-efficiency multi-junction solar cells”--Abstract, page iii.
"]},{"key":"dc:title","label":"Title","values":["Design and fabrication of field-effect III-V Schottky junction solar cells"]}]}],"canonical_facts":{"dc:creator":["Ghods, Amirhossein"],"dc:description.abstract":["“A new concept of field-effect photovoltaic devices with a focus on design and fabrication of single and multi-junction solar cells using III-V materials has been shown and proved. Schottky solar cells based on metal-(insulator)-semiconductor (M-I-S) structure have been designed and fabricated using various wide bandgap semiconductors, such as GaAs and Al0.3Ga0.7As. A secondary bias layer has been introduced to the device structure, in which it creates additional band bending and subsequently depletion region at the flat band regions on the top surface of the device. It should be mentioned that the bias layer is designed to be electrically isolated from the main current collection contacts, in order to prevent the decrease in Schottky barrier height due to change in applied forward voltage or external load resistance. The electrical and optical characterization results from these Isolated Collection and Biasing Schottky Solar Cells (ICBS) show an improvement in photovoltaic response compared to conventional Schottky junction solar cells. This demonstrates the effectiveness of this novel strategy to design and fabricate high-efficiency multi-junction solar cells”--Abstract, page iii.
"],"dc:identifier":["https://scholarsmine.mst.edu/doctoral_dissertations/3126"],"dc:subject":["Atomic Layer Deposition","Field-Effect Electronics","Multijunction Solar Cells","Photovoltaics","Schottky Junctions","Semiconductor Processing","Electrical and Computer Engineering"],"dc:title":["Design and fabrication of field-effect III-V Schottky junction solar cells"],"dc:type":["Dissertation - Open Access"],"thesis:degree_name":["Ph. D. in Electrical Engineering"],"thesis:institution_name":["Missouri University of Science and Technology"]},"updated_at":"2026-07-24T03:18:09Z"}