{"id":{"repo_id":"must-thes","oai_identifier":"oai:scholarsmine.mst.edu:doctoral_dissertations-3779"},"canonical_url":"https://search.dev.ndltd.org/etd/must-thes/oai:scholarsmine.mst.edu:doctoral_dissertations-3779","repository":{"repo_id":"must-thes","name":"Missouri University of Science and Technology","base_url":"https://scholarsmine.mst.edu/do/oai/"},"display":{"title":"Ferrite characterization techniques & particle simulations for semiconductor devices","abstract":"\"This dissertation is divided into three papers, covering two major topics. The first topic, techniques for ferrite characterization, is discussed over the course of two papers. The second topic, particle simulations for semiconductor devices, is discussed in the last paper. In the first paper, the method for extracting permeability from ferrite materials is discussed for the Keysight 16454A permeability extraction fixture, where the ferrite material to be characterized is assumed to be homogeneous. Then the method is updated to account for layered materials. The updated method is verified through full-wave simulations. In the second paper, a planar printed circuit board (PCB) coil is proposed as an alternative to the Keysight 16454A fixture for extracting permeability from ferrite materials. The method of extraction is verified through full-wave simulations. The final paper (and second topic) develops a particle simulator, based on the Boltzmann transport equation (BTE) and Monte Carlo (MC) methods, for studying semiconductor devices with submicron feature sizes. Particle simulations are advantageous because full-wave simulators based purely on Maxwell's equations are not able to capture certain semiconductor effects. This work specifically investigates metal-oxide-semiconductor (MOS) effects for a pair of through-silicon-vias (TSVs), and the corresponding accumulation and depletion regions formed for different bias voltages\"--Abstract, page iv.","abstract_html":""This dissertation is divided into three papers, covering two major topics. The first topic, techniques for ferrite characterization, is discussed over the course of two papers. The second topic, particle simulations for semiconductor devices, is discussed in the last paper. In the first paper, the method for extracting permeability from ferrite materials is discussed for the Keysight 16454A permeability extraction fixture, where the ferrite material to be characterized is assumed to be homogeneous. Then the method is updated to account for layered materials. The updated method is verified through full-wave simulations. In the second paper, a planar printed circuit board (PCB) coil is proposed as an alternative to the Keysight 16454A fixture for extracting permeability from ferrite materials. The method of extraction is verified through full-wave simulations. The final paper (and second topic) develops a particle simulator, based on the Boltzmann transport equation (BTE) and Monte Carlo (MC) methods, for studying semiconductor devices with submicron feature sizes. Particle simulations are advantageous because full-wave simulators based purely on Maxwell's equations are not able to capture certain semiconductor effects. This work specifically investigates metal-oxide-semiconductor (MOS) effects for a pair of through-silicon-vias (TSVs), and the corresponding accumulation and depletion regions formed for different bias voltages"--Abstract, page iv.","abstract_has_math":false,"creators":["Erickson, Nicholas"],"institution":"Missouri University of Science and Technology","degree_name":"Ph. D. in Computer Engineering","degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":null,"date_issued":"","date_published":null,"updated_at":"2026-07-24T03:18:26Z","subjects":["Ferrite sheet","Metal-oxide-semiconductor (MOS)","Monte Carlo particle simulation","Permeability","Planar inductor","Through-silicon-via (TSV)","Electrical and Computer Engineering","Physics"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://scholarsmine.mst.edu/doctoral_dissertations/2774","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Erickson, Nicholas"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:type","label":"Dc Type","values":["Dissertation - Open Access"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph. D. in Computer Engineering"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Missouri University of Science and Technology"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Ferrite sheet","Metal-oxide-semiconductor (MOS)","Monte Carlo particle simulation","Permeability","Planar inductor","Through-silicon-via (TSV)","Electrical and Computer Engineering","Physics"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://scholarsmine.mst.edu/doctoral_dissertations/2774"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["\"This dissertation is divided into three papers, covering two major topics. The first topic, techniques for ferrite characterization, is discussed over the course of two papers. The second topic, particle simulations for semiconductor devices, is discussed in the last paper. In the first paper, the method for extracting permeability from ferrite materials is discussed for the Keysight 16454A permeability extraction fixture, where the ferrite material to be characterized is assumed to be homogeneous. Then the method is updated to account for layered materials. The updated method is verified through full-wave simulations. In the second paper, a planar printed circuit board (PCB) coil is proposed as an alternative to the Keysight 16454A fixture for extracting permeability from ferrite materials. The method of extraction is verified through full-wave simulations. The final paper (and second topic) develops a particle simulator, based on the Boltzmann transport equation (BTE) and Monte Carlo (MC) methods, for studying semiconductor devices with submicron feature sizes. Particle simulations are advantageous because full-wave simulators based purely on Maxwell's equations are not able to capture certain semiconductor effects. This work specifically investigates metal-oxide-semiconductor (MOS) effects for a pair of through-silicon-vias (TSVs), and the corresponding accumulation and depletion regions formed for different bias voltages\"--Abstract, page iv."]},{"key":"dc:title","label":"Title","values":["Ferrite characterization techniques & particle simulations for semiconductor devices"]}]}],"canonical_facts":{"dc:creator":["Erickson, Nicholas"],"dc:description.abstract":["\"This dissertation is divided into three papers, covering two major topics. The first topic, techniques for ferrite characterization, is discussed over the course of two papers. The second topic, particle simulations for semiconductor devices, is discussed in the last paper. In the first paper, the method for extracting permeability from ferrite materials is discussed for the Keysight 16454A permeability extraction fixture, where the ferrite material to be characterized is assumed to be homogeneous. Then the method is updated to account for layered materials. The updated method is verified through full-wave simulations. In the second paper, a planar printed circuit board (PCB) coil is proposed as an alternative to the Keysight 16454A fixture for extracting permeability from ferrite materials. The method of extraction is verified through full-wave simulations. The final paper (and second topic) develops a particle simulator, based on the Boltzmann transport equation (BTE) and Monte Carlo (MC) methods, for studying semiconductor devices with submicron feature sizes. Particle simulations are advantageous because full-wave simulators based purely on Maxwell's equations are not able to capture certain semiconductor effects. This work specifically investigates metal-oxide-semiconductor (MOS) effects for a pair of through-silicon-vias (TSVs), and the corresponding accumulation and depletion regions formed for different bias voltages\"--Abstract, page iv."],"dc:identifier":["https://scholarsmine.mst.edu/doctoral_dissertations/2774"],"dc:subject":["Ferrite sheet","Metal-oxide-semiconductor (MOS)","Monte Carlo particle simulation","Permeability","Planar inductor","Through-silicon-via (TSV)","Electrical and Computer Engineering","Physics"],"dc:title":["Ferrite characterization techniques & particle simulations for semiconductor devices"],"dc:type":["Dissertation - Open Access"],"thesis:degree_name":["Ph. D. in Computer Engineering"],"thesis:institution_name":["Missouri University of Science and Technology"]},"updated_at":"2026-07-24T03:18:26Z"}