{"id":{"repo_id":"must-thes","oai_identifier":"oai:scholarsmine.mst.edu:doctoral_dissertations-2729"},"canonical_url":"https://search.dev.ndltd.org/etd/must-thes/oai:scholarsmine.mst.edu:doctoral_dissertations-2729","repository":{"repo_id":"must-thes","name":"Missouri University of Science and Technology","base_url":"https://scholarsmine.mst.edu/do/oai/"},"display":{"title":"Analysis of laser diode bar degradation","abstract":"\"Laser diode bars capable of producing over 100 Watts of continuous output power are finding increased use in military and industrial applications. These devices have a number of degradation mechanisms, ranging from the propagation of dislocations in the epitaxial layers used to create the p-n junction to oxidation of the mirror facets. In addition, degradation mechanisms caused by the packaging process are also common. In order to understand and quantify these degradation mechanisms, a spectrometer system and associated data analysis software have been developed that allow for in-depth analysis of each emitter in a laser diode bar. This system provides information related to facet defects, packaging-induced strain, thermal variations, and intra-cavity defects. The system has been used to quantify the relative strengths of various degradation mechanisms in a set of laser diode packages\"--Abstract, page iii.","abstract_html":""Laser diode bars capable of producing over 100 Watts of continuous output power are finding increased use in military and industrial applications. These devices have a number of degradation mechanisms, ranging from the propagation of dislocations in the epitaxial layers used to create the p-n junction to oxidation of the mirror facets. In addition, degradation mechanisms caused by the packaging process are also common. In order to understand and quantify these degradation mechanisms, a spectrometer system and associated data analysis software have been developed that allow for in-depth analysis of each emitter in a laser diode bar. This system provides information related to facet defects, packaging-induced strain, thermal variations, and intra-cavity defects. The system has been used to quantify the relative strengths of various degradation mechanisms in a set of laser diode packages"--Abstract, page iii.","abstract_has_math":false,"creators":["Feeler, C. Ryan"],"institution":"University of Missouri--Rolla","degree_name":"Ph. D. in Physics","degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2016,"date_issued":"2016-02-10T08:00:00Z","date_published":"2016-02-10T08:00:00Z","updated_at":"2026-07-24T03:20:12Z","subjects":["Physics"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://scholarsmine.mst.edu/doctoral_dissertations/1727","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Feeler, C. Ryan"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.available","label":"Dc Date Available","values":["2016-02-10T08:00:00Z"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation - Citation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph. D. in Physics"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Missouri--Rolla"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://scholarsmine.mst.edu/doctoral_dissertations/1727"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["\"Laser diode bars capable of producing over 100 Watts of continuous output power are finding increased use in military and industrial applications. These devices have a number of degradation mechanisms, ranging from the propagation of dislocations in the epitaxial layers used to create the p-n junction to oxidation of the mirror facets. In addition, degradation mechanisms caused by the packaging process are also common. In order to understand and quantify these degradation mechanisms, a spectrometer system and associated data analysis software have been developed that allow for in-depth analysis of each emitter in a laser diode bar. This system provides information related to facet defects, packaging-induced strain, thermal variations, and intra-cavity defects. The system has been used to quantify the relative strengths of various degradation mechanisms in a set of laser diode packages\"--Abstract, page iii."]},{"key":"dc:title","label":"Title","values":["Analysis of laser diode bar degradation"]}]}],"canonical_facts":{"dc:creator":["Feeler, C. Ryan"],"dc:date.available":["2016-02-10T08:00:00Z"],"dc:description.abstract":["\"Laser diode bars capable of producing over 100 Watts of continuous output power are finding increased use in military and industrial applications. These devices have a number of degradation mechanisms, ranging from the propagation of dislocations in the epitaxial layers used to create the p-n junction to oxidation of the mirror facets. In addition, degradation mechanisms caused by the packaging process are also common. In order to understand and quantify these degradation mechanisms, a spectrometer system and associated data analysis software have been developed that allow for in-depth analysis of each emitter in a laser diode bar. This system provides information related to facet defects, packaging-induced strain, thermal variations, and intra-cavity defects. The system has been used to quantify the relative strengths of various degradation mechanisms in a set of laser diode packages\"--Abstract, page iii."],"dc:identifier":["https://scholarsmine.mst.edu/doctoral_dissertations/1727"],"dc:subject":["Physics"],"dc:title":["Analysis of laser diode bar degradation"],"dc:type":["Dissertation - Citation"],"thesis:degree_name":["Ph. D. in Physics"],"thesis:institution_name":["University of Missouri--Rolla"]},"updated_at":"2026-07-24T03:20:12Z"}