Ion Implantation Synthesis of Silicon Carbide
type: CreativeWork
description: Silicon wafers with 200A of carbon deposited on the surface were implanted with 50 keV N⁺ ions at a dose of 1x10¹⁶ ions/cm² at room temperature. The implanted samples were cut to several pieces and annealed in vacuum (at a pressure of 5x10⁻⁸ torr) at temperatures of 800°C and 900°C, and inert gas at a temperature of 1000°C for 30 minutes. RBS analysis shows that after implantation carbon is distributed in the range of 0 to 1000A beneath the silicon surface, and the silicon substrate shows a disordered range of about 1400A. Carbon atoms follow an apparent Gaussian distribution in silicon substrate that is consistent with the theoretical predictions. After annealing, a buried or near surface silicon carbide grains in host silicon matrix was formed, and the disordered range narrowed. A maximum C/Si ratio of about 0.2 or less was measured for all the samples.
abstract: Silicon wafers with 200A of carbon deposited on the surface were implanted with 50 keV N⁺ ions at a dose of 1x10¹⁶ ions/cm² at room temperature. The implanted samples were cut to several pieces and annealed in vacuum (at a pressure of 5x10⁻⁸ torr) at temperatures of 800°C and 900°C, and inert gas at a temperature of 1000°C for 30 minutes. RBS analysis shows that after implantation carbon is distributed in the range of 0 to 1000A beneath the silicon surface, and the silicon substrate shows a disordered range of about 1400A. Carbon atoms follow an apparent Gaussian distribution in silicon substrate that is consistent with the theoretical predictions. After annealing, a buried or near surface silicon carbide grains in host silicon matrix was formed, and the disordered range narrowed. A maximum C/Si ratio of about 0.2 or less was measured for all the samples.
author: Wang, Yubao
keywords: Materials Science and Engineering
date published: 1999-12-01T08:00:00Z
date modified: 2026-07-24T03:15:54Z
provider: Missouri State University
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: Missouri State University