{"id":{"repo_id":"mo-state","oai_identifier":"oai:bearworks.missouristate.edu:theses-1837"},"canonical_url":"https://search.dev.ndltd.org/etd/mo-state/oai:bearworks.missouristate.edu:theses-1837","repository":{"repo_id":"mo-state","name":"Missouri State University","base_url":"https://bearworks.missouristate.edu/do/oai/"},"display":{"title":"Ion Implantation Synthesis of Silicon Carbide","abstract":"Silicon wafers with 200A of carbon deposited on the surface were implanted with 50 keV N⁺ ions at a dose of 1x10¹⁶ ions/cm² at room temperature. The implanted samples were cut to several pieces and annealed in vacuum (at a pressure of 5x10⁻⁸ torr) at temperatures of 800°C and 900°C, and inert gas at a temperature of 1000°C for 30 minutes. RBS analysis shows that after implantation carbon is distributed in the range of 0 to 1000A beneath the silicon surface, and the silicon substrate shows a disordered range of about 1400A. Carbon atoms follow an apparent Gaussian distribution in silicon substrate that is consistent with the theoretical predictions. After annealing, a buried or near surface silicon carbide grains in host silicon matrix was formed, and the disordered range narrowed. A maximum C/Si ratio of about 0.2 or less was measured for all the samples.","abstract_html":"Silicon wafers with 200A of carbon deposited on the surface were implanted with 50 keV N⁺ ions at a dose of 1x10¹⁶ ions/cm² at room temperature. The implanted samples were cut to several pieces and annealed in vacuum (at a pressure of 5x10⁻⁸ torr) at temperatures of 800°C and 900°C, and inert gas at a temperature of 1000°C for 30 minutes. RBS analysis shows that after implantation carbon is distributed in the range of 0 to 1000A beneath the silicon surface, and the silicon substrate shows a disordered range of about 1400A. Carbon atoms follow an apparent Gaussian distribution in silicon substrate that is consistent with the theoretical predictions. After annealing, a buried or near surface silicon carbide grains in host silicon matrix was formed, and the disordered range narrowed. A maximum C/Si ratio of about 0.2 or less was measured for all the samples.","abstract_has_math":false,"creators":["Wang, Yubao"],"institution":null,"degree_name":"Master of Science in Materials Science","degree_level":"Masters","degree_discipline":"Physics, Astronomy, and Materials Science","degree_department":null,"school":null,"contributors":["Ryan Giedd"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1999,"date_issued":"1999-12-01T08:00:00Z","date_published":"1999-12-01T08:00:00Z","updated_at":"2026-07-24T03:15:54Z","subjects":["Materials Science and Engineering"],"languages":[],"rights":["© Yubao Wang"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://bearworks.missouristate.edu/theses/836","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Ryan Giedd"]},{"key":"dc:creator","label":"Author","values":["Wang, Yubao"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics, Astronomy, and Materials Science"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science in Materials Science"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Materials Science and Engineering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:rights","label":"Dc Rights","values":["© Yubao Wang"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://bearworks.missouristate.edu/theses/836"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Silicon wafers with 200A of carbon deposited on the surface were implanted with 50 keV N⁺ ions at a dose of 1x10¹⁶ ions/cm² at room temperature. The implanted samples were cut to several pieces and annealed in vacuum (at a pressure of 5x10⁻⁸ torr) at temperatures of 800°C and 900°C, and inert gas at a temperature of 1000°C for 30 minutes. RBS analysis shows that after implantation carbon is distributed in the range of 0 to 1000A beneath the silicon surface, and the silicon substrate shows a disordered range of about 1400A. Carbon atoms follow an apparent Gaussian distribution in silicon substrate that is consistent with the theoretical predictions. After annealing, a buried or near surface silicon carbide grains in host silicon matrix was formed, and the disordered range narrowed. A maximum C/Si ratio of about 0.2 or less was measured for all the samples."]},{"key":"dc:title","label":"Title","values":["Ion Implantation Synthesis of Silicon Carbide"]}]}],"canonical_facts":{"dc:contributor":["Ryan Giedd"],"dc:creator":["Wang, Yubao"],"dc:description.abstract":["Silicon wafers with 200A of carbon deposited on the surface were implanted with 50 keV N⁺ ions at a dose of 1x10¹⁶ ions/cm² at room temperature. The implanted samples were cut to several pieces and annealed in vacuum (at a pressure of 5x10⁻⁸ torr) at temperatures of 800°C and 900°C, and inert gas at a temperature of 1000°C for 30 minutes. RBS analysis shows that after implantation carbon is distributed in the range of 0 to 1000A beneath the silicon surface, and the silicon substrate shows a disordered range of about 1400A. Carbon atoms follow an apparent Gaussian distribution in silicon substrate that is consistent with the theoretical predictions. After annealing, a buried or near surface silicon carbide grains in host silicon matrix was formed, and the disordered range narrowed. A maximum C/Si ratio of about 0.2 or less was measured for all the samples."],"dc:identifier":["https://bearworks.missouristate.edu/theses/836"],"dc:rights":["© Yubao Wang"],"dc:subject":["Materials Science and Engineering"],"dc:title":["Ion Implantation Synthesis of Silicon Carbide"],"thesis:degree_discipline":["Physics, Astronomy, and Materials Science"],"thesis:degree_level":["Masters"],"thesis:degree_name":["Master of Science in Materials Science"]},"updated_at":"2026-07-24T03:15:54Z"}