{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/9557"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/9557","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Sol-gel synthesis of one-dimensional photonic bandgap structures","abstract":"A series of one-dimensional photonic bandgap devices were fabricated using SiO2 and TiO2 films deposited from solution by the sol-gel method. A dielectric mirror, or broadband interference filter, was fabricated by alternating quarter-wave optical thickness layers of the two films on a silicon substrate for a total of six layer pairs. This device exhibited an omnidirectional photonic bandgap of 450 nm in TE-polarization and 110 nm in TM-polarization. A microcavity, or narrowband filter, was fabricated with a TiO2 Fabry-Perot cavity sandwiched between two mirrors of three layer pairs each. The resonant cavity corresponded to a wavelength of roughly 1500 nm and shifted to shorter wavelengths with increasing incident angles. A maximum resonant quality factor of 11. 7 was achieved.","abstract_html":"A series of one-dimensional photonic bandgap devices were fabricated using SiO2 and TiO2 films deposited from solution by the sol-gel method. A dielectric mirror, or broadband interference filter, was fabricated by alternating quarter-wave optical thickness layers of the two films on a silicon substrate for a total of six layer pairs. This device exhibited an omnidirectional photonic bandgap of 450 nm in TE-polarization and 110 nm in TM-polarization. A microcavity, or narrowband filter, was fabricated with a TiO2 Fabry-Perot cavity sandwiched between two mirrors of three layer pairs each. The resonant cavity corresponded to a wavelength of roughly 1500 nm and shifted to shorter wavelengths with increasing incident angles. A maximum resonant quality factor of 11. 7 was achieved.","abstract_has_math":false,"creators":["Sparks, Andrew William, 1977-"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.","school":null,"contributors":[],"advisors":["Lionel C. Kimerling."],"committee_chairs":[],"committee_members":[],"year":1999,"date_issued":"1999","date_published":"1999","updated_at":"2026-07-22T22:21:39Z","subjects":["Materials Science and Engineering."],"languages":["eng"],"rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"rights_urls":["http://dspace.mit.edu/handle/1721.1/7582"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1721.1/9557","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Lionel C. Kimerling."]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. Dept. of Materials Science and Engineering."]},{"key":"dc:contributor.other","label":"Dc Contributor Other","values":["Massachusetts Institute of Technology. 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They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://dspace.mit.edu/handle/1721.1/7582"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1721.1/9557"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.","Includes bibliographical references (p. 26-27)."]},{"key":"dc:description.abstract","label":"Abstract","values":["A series of one-dimensional photonic bandgap devices were fabricated using SiO2 and TiO2 films deposited from solution by the sol-gel method. A dielectric mirror, or broadband interference filter, was fabricated by alternating quarter-wave optical thickness layers of the two films on a silicon substrate for a total of six layer pairs. This device exhibited an omnidirectional photonic bandgap of 450 nm in TE-polarization and 110 nm in TM-polarization. A microcavity, or narrowband filter, was fabricated with a TiO2 Fabry-Perot cavity sandwiched between two mirrors of three layer pairs each. The resonant cavity corresponded to a wavelength of roughly 1500 nm and shifted to shorter wavelengths with increasing incident angles. A maximum resonant quality factor of 11. 7 was achieved."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["S.B."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Sol-gel synthesis of one-dimensional photonic bandgap structures"]}]}],"canonical_facts":{"dc:contributor.advisor":["Lionel C. Kimerling."],"dc:contributor.department":["Massachusetts Institute of Technology. Dept. of Materials Science and Engineering."],"dc:contributor.other":["Massachusetts Institute of Technology. Dept. of Materials Science and Engineering."],"dc:creator":["Sparks, Andrew William, 1977-"],"dc:date.accessioned":["2005-08-22T19:16:34Z"],"dc:date.available":["2005-08-22T19:16:34Z"],"dc:date.issued":["1999"],"dc:description":["Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.","Includes bibliographical references (p. 26-27)."],"dc:description.abstract":["A series of one-dimensional photonic bandgap devices were fabricated using SiO2 and TiO2 films deposited from solution by the sol-gel method. A dielectric mirror, or broadband interference filter, was fabricated by alternating quarter-wave optical thickness layers of the two films on a silicon substrate for a total of six layer pairs. This device exhibited an omnidirectional photonic bandgap of 450 nm in TE-polarization and 110 nm in TM-polarization. A microcavity, or narrowband filter, was fabricated with a TiO2 Fabry-Perot cavity sandwiched between two mirrors of three layer pairs each. The resonant cavity corresponded to a wavelength of roughly 1500 nm and shifted to shorter wavelengths with increasing incident angles. A maximum resonant quality factor of 11. 7 was achieved."],"dc:description.degree":["S.B."],"dc:format.mimetype":["application/pdf"],"dc:identifier.uri":["http://hdl.handle.net/1721.1/9557"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"dc:rights.uri":["http://dspace.mit.edu/handle/1721.1/7582"],"dc:subject":["Materials Science and Engineering."],"dc:title":["Sol-gel synthesis of one-dimensional photonic bandgap structures"],"dc:type":["Thesis"]},"updated_at":"2026-07-22T22:21:39Z"}