{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/91085"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/91085","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress","abstract":"GaN HEMTs (High Electron Mobility Transistors) are promising candidates for high power and high frequency applications but their reliability needs to be established before their wide deployment can be realized. In this thesis, degradation mechanisms of GaN HEMTs under high-power and high-temperature stress have been studied. A novel technique to extract activation energy of degradation rate from measurements on a single device has been proposed. High-power and high-temperature stress has revealed two sequential degradation mechanisms where the gate current degrades first and saturates only after which the drain current shows significant degradation. A study of the semiconductor surface of delaminated degraded devices shows formation of grooves and pits at the gate edge on the drain side. Electrical degradation is shown to directly correlate with structural degradation. Also, higher junction temperature is shown to results in more severe structural degradation.","abstract_html":"GaN HEMTs (High Electron Mobility Transistors) are promising candidates for high power and high frequency applications but their reliability needs to be established before their wide deployment can be realized. In this thesis, degradation mechanisms of GaN HEMTs under high-power and high-temperature stress have been studied. A novel technique to extract activation energy of degradation rate from measurements on a single device has been proposed. High-power and high-temperature stress has revealed two sequential degradation mechanisms where the gate current degrades first and saturates only after which the drain current shows significant degradation. A study of the semiconductor surface of delaminated degraded devices shows formation of grooves and pits at the gate edge on the drain side. Electrical degradation is shown to directly correlate with structural degradation. Also, higher junction temperature is shown to results in more severe structural degradation.","abstract_has_math":false,"creators":["Wu, Yufei, Ph. D. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.","school":null,"contributors":[],"advisors":["Jesus A. del Alamo."],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014","date_published":"2014","updated_at":"2026-07-22T22:22:28Z","subjects":["Electrical Engineering and Computer Science."],"languages":["eng"],"rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"rights_urls":["http://dspace.mit.edu/handle/1721.1/7582"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1721.1/91085","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Jesus A. del Alamo."]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."]},{"key":"dc:contributor.other","label":"Dc Contributor Other","values":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."]},{"key":"dc:creator","label":"Author","values":["Wu, Yufei, Ph. D. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2014-10-21T17:25:13Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2014-10-21T17:25:13Z"]},{"key":"dc:date.issued","label":"Date","values":["2014"]},{"key":"dc:publisher","label":"Institution","values":["Massachusetts Institute of Technology"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Electrical Engineering and Computer Science."]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://dspace.mit.edu/handle/1721.1/7582"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1721.1/91085"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.","41","Cataloged from PDF version of thesis.","Includes bibliographical references (pages 77-79)."]},{"key":"dc:description.abstract","label":"Abstract","values":["GaN HEMTs (High Electron Mobility Transistors) are promising candidates for high power and high frequency applications but their reliability needs to be established before their wide deployment can be realized. In this thesis, degradation mechanisms of GaN HEMTs under high-power and high-temperature stress have been studied. A novel technique to extract activation energy of degradation rate from measurements on a single device has been proposed. High-power and high-temperature stress has revealed two sequential degradation mechanisms where the gate current degrades first and saturates only after which the drain current shows significant degradation. A study of the semiconductor surface of delaminated degraded devices shows formation of grooves and pits at the gate edge on the drain side. Electrical degradation is shown to directly correlate with structural degradation. Also, higher junction temperature is shown to results in more severe structural degradation."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["S.M. in Electrical Engineering"]},{"key":"dc:title","label":"Title","values":["Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress"]}]}],"canonical_facts":{"dc:contributor.advisor":["Jesus A. del Alamo."],"dc:contributor.department":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."],"dc:contributor.other":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."],"dc:creator":["Wu, Yufei, Ph. D. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."],"dc:date.accessioned":["2014-10-21T17:25:13Z"],"dc:date.available":["2014-10-21T17:25:13Z"],"dc:date.issued":["2014"],"dc:description":["Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.","41","Cataloged from PDF version of thesis.","Includes bibliographical references (pages 77-79)."],"dc:description.abstract":["GaN HEMTs (High Electron Mobility Transistors) are promising candidates for high power and high frequency applications but their reliability needs to be established before their wide deployment can be realized. In this thesis, degradation mechanisms of GaN HEMTs under high-power and high-temperature stress have been studied. A novel technique to extract activation energy of degradation rate from measurements on a single device has been proposed. High-power and high-temperature stress has revealed two sequential degradation mechanisms where the gate current degrades first and saturates only after which the drain current shows significant degradation. A study of the semiconductor surface of delaminated degraded devices shows formation of grooves and pits at the gate edge on the drain side. Electrical degradation is shown to directly correlate with structural degradation. Also, higher junction temperature is shown to results in more severe structural degradation."],"dc:description.degree":["S.M. in Electrical Engineering"],"dc:identifier.uri":["http://hdl.handle.net/1721.1/91085"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"dc:rights.uri":["http://dspace.mit.edu/handle/1721.1/7582"],"dc:subject":["Electrical Engineering and Computer Science."],"dc:title":["Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress"],"dc:type":["Thesis"]},"updated_at":"2026-07-22T22:22:28Z"}