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Massachusetts Institute of Technology

The development of a nonvolatile ferroelectric memory with nondestructive readout

Abstract

dc:description.abstract

For the past three years, a project group at the Charles Stark Draper Laboratory has been developing a nonvolatile memory that uses novel ferroelectric technology. The advancements made could prove to give ferroelectrics a new lease on life as a memory technology by overcoming some of the inherent limitations that have hampered their use in the past. The primary advancement of the project has been the development of a nondestructive readout (NDRO) technique which exploits the hysteresis exhibited by the small-signal capacitance of ferroelectrics. This has led to the development of an NDRO sense amplifier which has evolved from circuit board prototypes to a fully custom CMOS part. A multichip module (MCM) was employed to integrate the CMOS technology with a ferroelectric technology. This thesis develops several models for the behavior of ferroelectrics, examines how ferroelectric memory compares to the more mainstream silicon-based memory technologies, and chronicles the project from the inception of the NDRO sensing technique through the production of the various experimental parts.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
1994

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Chadwick, Thomas B. (Thomas Burhoe)
Advisor dc:contributor.advisor
  • Anthony Marques and James E. Chung.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/9096
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/9096

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Chadwick, Thomas B. (Thomas Burhoe). The development of a nonvolatile ferroelectric memory with nondestructive readout. Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/9096