{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/8947"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/8947","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Modeling of chemical mechanical polishing using fixed abrasive technology","abstract":"Chemical Mechanical Polishing (CMP) is conventionally carried out using abrasive slurry and a polishing pad. An alternative process is the \"fixed abrasive\" polish. Existing models, which accurately predict oxide thickness variations across a chip for the conventional CMP process, have not previously been tested for the fixed abrasive process. In this study wafers were polished using the fixed abrasive pad and the data fitted against the density and step-height model. Results show that little down area polish occurs with the use of the fixed abrasive pad, except in areas of low-density. The step height model which accounts for contact height, shows improved accuracy over the density model for areas of low density. The density model however is sufficiently accurate for areas of higher density. Modeling new variants of the fixed abrasive pad may require further study and model extensions related to additional effects and pad properties.","abstract_html":"Chemical Mechanical Polishing (CMP) is conventionally carried out using abrasive slurry and a polishing pad. An alternative process is the "fixed abrasive" polish. Existing models, which accurately predict oxide thickness variations across a chip for the conventional CMP process, have not previously been tested for the fixed abrasive process. In this study wafers were polished using the fixed abrasive pad and the data fitted against the density and step-height model. Results show that little down area polish occurs with the use of the fixed abrasive pad, except in areas of low-density. The step height model which accounts for contact height, shows improved accuracy over the density model for areas of low density. The density model however is sufficiently accurate for areas of higher density. Modeling new variants of the fixed abrasive pad may require further study and model extensions related to additional effects and pad properties.","abstract_has_math":false,"creators":["Dutt, Radhika, 1978-"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.","school":null,"contributors":[],"advisors":["Duane S. Boning."],"committee_chairs":[],"committee_members":[],"year":2001,"date_issued":"2001","date_published":"2001","updated_at":"2026-07-22T22:22:26Z","subjects":["Electrical Engineering and Computer Science."],"languages":["eng"],"rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"rights_urls":["http://dspace.mit.edu/handle/1721.1/7582"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1721.1/8947","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Duane S. Boning."]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."]},{"key":"dc:contributor.other","label":"Dc Contributor Other","values":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."]},{"key":"dc:creator","label":"Author","values":["Dutt, Radhika, 1978-"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2005-08-23T16:34:52Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2005-08-23T16:34:52Z"]},{"key":"dc:date.issued","label":"Date","values":["2001"]},{"key":"dc:publisher","label":"Institution","values":["Massachusetts Institute of Technology"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Electrical Engineering and Computer Science."]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://dspace.mit.edu/handle/1721.1/7582"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1721.1/8947"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2001.","Includes bibliographical references (leaves 61-62)."]},{"key":"dc:description.abstract","label":"Abstract","values":["Chemical Mechanical Polishing (CMP) is conventionally carried out using abrasive slurry and a polishing pad. An alternative process is the \"fixed abrasive\" polish. Existing models, which accurately predict oxide thickness variations across a chip for the conventional CMP process, have not previously been tested for the fixed abrasive process. In this study wafers were polished using the fixed abrasive pad and the data fitted against the density and step-height model. Results show that little down area polish occurs with the use of the fixed abrasive pad, except in areas of low-density. The step height model which accounts for contact height, shows improved accuracy over the density model for areas of low density. The density model however is sufficiently accurate for areas of higher density. Modeling new variants of the fixed abrasive pad may require further study and model extensions related to additional effects and pad properties."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["M.Eng."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Modeling of chemical mechanical polishing using fixed abrasive technology"]}]}],"canonical_facts":{"dc:contributor.advisor":["Duane S. Boning."],"dc:contributor.department":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."],"dc:contributor.other":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."],"dc:creator":["Dutt, Radhika, 1978-"],"dc:date.accessioned":["2005-08-23T16:34:52Z"],"dc:date.available":["2005-08-23T16:34:52Z"],"dc:date.issued":["2001"],"dc:description":["Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2001.","Includes bibliographical references (leaves 61-62)."],"dc:description.abstract":["Chemical Mechanical Polishing (CMP) is conventionally carried out using abrasive slurry and a polishing pad. An alternative process is the \"fixed abrasive\" polish. Existing models, which accurately predict oxide thickness variations across a chip for the conventional CMP process, have not previously been tested for the fixed abrasive process. In this study wafers were polished using the fixed abrasive pad and the data fitted against the density and step-height model. Results show that little down area polish occurs with the use of the fixed abrasive pad, except in areas of low-density. The step height model which accounts for contact height, shows improved accuracy over the density model for areas of low density. The density model however is sufficiently accurate for areas of higher density. Modeling new variants of the fixed abrasive pad may require further study and model extensions related to additional effects and pad properties."],"dc:description.degree":["M.Eng."],"dc:format.mimetype":["application/pdf"],"dc:identifier.uri":["http://hdl.handle.net/1721.1/8947"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"dc:rights.uri":["http://dspace.mit.edu/handle/1721.1/7582"],"dc:subject":["Electrical Engineering and Computer Science."],"dc:title":["Modeling of chemical mechanical polishing using fixed abrasive technology"],"dc:type":["Thesis"]},"updated_at":"2026-07-22T22:22:26Z"}