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Massachusetts Institute of Technology

Dielectric sensing of silicon accelerometers

Abstract

dc:description.abstract

Microaccelerometers have established themselves as a vital piece of the global microelectromechanical systems (MEMS) market with applications spanning automotive, industrial, military, biomedical, and consumer electronics sectors. They remain one of the top-selling silicon sensors, with $1.6 billion in revenue reported in 2011 equating to 15% of the total MEMS market. Continued, expected growth in the next few years demands innovation to meet new industry requirements. Current commercial accelerometer designs are based on a differential capacitor structure which measures the change in capacitance between a set of interdigitated fingers. These fingers are separated by air gaps in high aspect ratio, suspended polysilicon microstructures. Despite its widespread use, the air gap capacitor has some significant drawbacks. It involves a release step during fabrication which introduces complexity and variation in the devices. In addition, these transducers are subject to pull in and stiction which can render a device inoperable. Air gap devices are vulnerable to particulates requiring complicated packaging steps which increase cost and yield of production. Moreover, these devices are also subject to electrical drift. All of these issues can be addressed by replacing this air gap with a dielectric. Not only does it mitigate these concerns, it also offers potential for smaller device footprint, more robust design, and increased shock survival. This project developed a new accelerometer design sandwiching a thin film dielectric between two electrodes. This capacitor was patterned on top of a bending flexure which supported a large hanging mass. In the presence of an external acceleration, the deflection of the suspension beams caused a deformation of the dielectric film resulting in a change in capacitance. Fabrication using an SOI substrate allowed for increased deflection and process control.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
2013

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Kroese, Bethany Ruth
Advisor dc:contributor.advisor
  • Dana Weinstein.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/85433
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/85433

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Kroese, Bethany Ruth. Dielectric sensing of silicon accelerometers. Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/85433