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Massachusetts Institute of Technology

Design of class E resonant rectifiers for very high frequency power conversion

Abstract

dc:description.abstract

Resonant rectifiers have important applications in very-high-frequency power conversion systems, including dc-dc converters, wireless power transfer systems, and energy recovery circuits for radio-frequency systems. In many of these applications, it is desirable for the rectifier to appear as a resistor at its ac input port. However, for a given dc output voltage, the input impedance of a resonant rectifier varies in magnitude and phase as output power changes. In this thesis, a design method is introduced for realizing single-diode "shunt-loaded" resonant rectifiers, or class E rectifiers, that provide near-resistive input impedance over a wide range of output power levels. The proposed methodology is demonstrated experimentally for 10:1 and 2:1 power range ratios at 30 MHz input frequency. Some design limitations are found and explained. Additionally, the performance of Schottky diodes in very high frequency (VHF) rectifiers is explored. It has been found that diodes have increased losses when switched at VHF and this phenomenon varies by manufacturer and device specifications. A study of diodes in Class E rectifiers is conducted to assess their performance in VHF rectification. Some good diodes are identified for VHF operation, including both commercial Si and SiC Schottky diodes and experimental GaN diodes. The foundations are laid for developing a library of diodes useful for this application. The resonant rectifier design methodology presented in this thesis uses a graphical approach based on normalized design curves. It enables a fast design with only a small amount of calculations needed and yields good accuracy in the final circuit. It is hoped that this design approach and the insights available from the design curves will prove to be useful in designing resonant rectifiers in applications that require resistive rectifier loads.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
2013

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Santiago-GonzáIez, Juan Antonio
Advisor dc:contributor.advisor
  • David J. Perreault and Khurram K. Afridi.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/84862
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/84862

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Santiago-GonzáIez, Juan Antonio. Design of class E resonant rectifiers for very high frequency power conversion. Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/84862