{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/8461"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/8461","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Analysis of magnetic random access memory applications","abstract":"Magnetic Random Access Memory (MRAM) is considered to be the most viable option for nonvolatile memory in the computer industry. This need for nonvolatile computer memory has resulted in the dramatic evolution of MRAM technology in the past ten years. Currently in the latter stages of development, emphasis is being put on experiments concerning optimization of density and reduction of the switching fields of the magnetic elements. Applications of MRAM technology are currently being explored by companies who seek to obtain relevant intellectual property in those areas. 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