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Massachusetts Institute of Technology

Characterization of OMVPE-grown GaSb-based epilayers using in situ reflectance and ex situ TEM

Abstract

dc:description.abstract

The focus of this thesis was to investigate and characterize GaSb, GaInAsSb, and AlGaAsSb epilayers grown by organometallic vapor phase epitaxy (OMVPE). These epilayers were principally characterized using in situ spectral reflectance and ex situ transmission electron microscopy (TEM). An in situ spectral (380-1100 nm) reflectance monitoring system was designed and fitted to the OMVPE reactor. It was determined that longer wavelengths are more useful for quantitative growth rate analysis, while shorter wavelengths are more sensitive to the GaSb substrate oxide desorption process. It was also determined that the GaInAsSb and AlGaAsSb alloy compositions could be determined accurately using in situ reflectance ratios. Use of the in situ reflectance monitor to efficiently perform necessary reactor/growth calibrations was also demonstrated. Analytic functions were used to model the refractive indices of GaSb, AlGaAsSb, and GaInAsSb. Specifically, Adachi's Model Dielectric Function [1, 2] was curve-fit to data for GaSb between 400 and 1000 nm, and fourth-order polynomials were fit to data for GaSb and GaInAsSb between 1 and 3 gnm. A linear interpolation of binary functions was used to generate a refractive index model for AlGaAsSb between 1 and 3 m as a function of Al fraction. These models were helpful in interpreting in situ reflectance data, and also in designing distributed Bragg reflectors. Phase separation in GaInAsSb was studied using TEM. A wide range of microstructures was observed, from nearly homogeneous to strongly phase separated.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
2001

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Vineis, Christopher J. (Christopher Joseph), 1974-
Advisor dc:contributor.advisor
  • Christine A. Wang and Klavs F. Jensen.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/8452
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/8452

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
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citation

Vineis, Christopher J. (Christopher Joseph), 1974-. Characterization of OMVPE-grown GaSb-based epilayers using in situ reflectance and ex situ TEM. Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/8452