{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/82358"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/82358","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Two-dimensional materials for ubiquitous electronics","abstract":"Ubiquitous electronics will be a very important component of future electronics. However, today's approaches to large area, low cost, potentially ubiquitous electronic devices are currently dominated by the low mobility of amorphous silicon and organic semiconductor. Two-dimensional materials are good candidates for ubiquitous electronics because of their excellent properties such as transparency, flexibility, high mobility and low cost. This thesis focused on the development of the first devices and circuits based on transition metal dichalcogenides (TMDs), a family of two dimensional semiconductors. The transport properties of exfoliated few layer flakes MoS2 and chemical vapor deposition (CVD) grown single layer large area MoS2 are systematically studies. Integrated devices and circuits based on large-scale single-layer MoS2 grown by CVD are demonstrated for the first time. The transistors fabricated on this material demonstrate excellent characteristics such as record mobility for CVD MoS 2, ultra-high on/off current ratio, record current density and GHz RF performance. The demonstration of both digital and analogue circuits shows the remarkable capability of this single- molecular- layer thick material for mixed-signal applications, offering scalable new materials that can combine silicon-like performance with the mechanical flexibility and integration versatility of organic semiconductors.","abstract_html":"Ubiquitous electronics will be a very important component of future electronics. However, today's approaches to large area, low cost, potentially ubiquitous electronic devices are currently dominated by the low mobility of amorphous silicon and organic semiconductor. Two-dimensional materials are good candidates for ubiquitous electronics because of their excellent properties such as transparency, flexibility, high mobility and low cost. This thesis focused on the development of the first devices and circuits based on transition metal dichalcogenides (TMDs), a family of two dimensional semiconductors. The transport properties of exfoliated few layer flakes MoS2 and chemical vapor deposition (CVD) grown single layer large area MoS2 are systematically studies. Integrated devices and circuits based on large-scale single-layer MoS2 grown by CVD are demonstrated for the first time. The transistors fabricated on this material demonstrate excellent characteristics such as record mobility for CVD MoS 2, ultra-high on/off current ratio, record current density and GHz RF performance. The demonstration of both digital and analogue circuits shows the remarkable capability of this single- molecular- layer thick material for mixed-signal applications, offering scalable new materials that can combine silicon-like performance with the mechanical flexibility and integration versatility of organic semiconductors.","abstract_has_math":false,"creators":["Yu, Lili, Ph. D. Massachusetts Institute of Technology"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.","school":null,"contributors":[],"advisors":["Tomás Palacios."],"committee_chairs":[],"committee_members":[],"year":2013,"date_issued":"2013","date_published":"2013","updated_at":"2026-07-22T22:20:56Z","subjects":["Electrical Engineering and Computer Science."],"languages":["eng"],"rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"rights_urls":["http://dspace.mit.edu/handle/1721.1/7582"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1721.1/82358","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Tomás Palacios."]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."]},{"key":"dc:contributor.other","label":"Dc Contributor Other","values":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."]},{"key":"dc:creator","label":"Author","values":["Yu, Lili, Ph. D. 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They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://dspace.mit.edu/handle/1721.1/7582"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1721.1/82358"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013.","\"June 2013.\" Title as it appears in MIT Commencement Exercises program, June 2013: Electronic applications of two-dimensional materials. Cataloged from PDF version of thesis.","Includes bibliographical references (p. 102-109)."]},{"key":"dc:description.abstract","label":"Abstract","values":["Ubiquitous electronics will be a very important component of future electronics. However, today's approaches to large area, low cost, potentially ubiquitous electronic devices are currently dominated by the low mobility of amorphous silicon and organic semiconductor. Two-dimensional materials are good candidates for ubiquitous electronics because of their excellent properties such as transparency, flexibility, high mobility and low cost. This thesis focused on the development of the first devices and circuits based on transition metal dichalcogenides (TMDs), a family of two dimensional semiconductors. The transport properties of exfoliated few layer flakes MoS2 and chemical vapor deposition (CVD) grown single layer large area MoS2 are systematically studies. Integrated devices and circuits based on large-scale single-layer MoS2 grown by CVD are demonstrated for the first time. The transistors fabricated on this material demonstrate excellent characteristics such as record mobility for CVD MoS 2, ultra-high on/off current ratio, record current density and GHz RF performance. The demonstration of both digital and analogue circuits shows the remarkable capability of this single- molecular- layer thick material for mixed-signal applications, offering scalable new materials that can combine silicon-like performance with the mechanical flexibility and integration versatility of organic semiconductors."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["S.M."]},{"key":"dc:title","label":"Title","values":["Two-dimensional materials for ubiquitous electronics"]}]}],"canonical_facts":{"dc:contributor.advisor":["Tomás Palacios."],"dc:contributor.department":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."],"dc:contributor.other":["Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science."],"dc:creator":["Yu, Lili, Ph. D. Massachusetts Institute of Technology"],"dc:date.accessioned":["2013-11-18T19:13:15Z"],"dc:date.available":["2013-11-18T19:13:15Z"],"dc:date.issued":["2013"],"dc:description":["Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013.","\"June 2013.\" Title as it appears in MIT Commencement Exercises program, June 2013: Electronic applications of two-dimensional materials. Cataloged from PDF version of thesis.","Includes bibliographical references (p. 102-109)."],"dc:description.abstract":["Ubiquitous electronics will be a very important component of future electronics. However, today's approaches to large area, low cost, potentially ubiquitous electronic devices are currently dominated by the low mobility of amorphous silicon and organic semiconductor. Two-dimensional materials are good candidates for ubiquitous electronics because of their excellent properties such as transparency, flexibility, high mobility and low cost. This thesis focused on the development of the first devices and circuits based on transition metal dichalcogenides (TMDs), a family of two dimensional semiconductors. The transport properties of exfoliated few layer flakes MoS2 and chemical vapor deposition (CVD) grown single layer large area MoS2 are systematically studies. Integrated devices and circuits based on large-scale single-layer MoS2 grown by CVD are demonstrated for the first time. The transistors fabricated on this material demonstrate excellent characteristics such as record mobility for CVD MoS 2, ultra-high on/off current ratio, record current density and GHz RF performance. The demonstration of both digital and analogue circuits shows the remarkable capability of this single- molecular- layer thick material for mixed-signal applications, offering scalable new materials that can combine silicon-like performance with the mechanical flexibility and integration versatility of organic semiconductors."],"dc:description.degree":["S.M."],"dc:identifier.uri":["http://hdl.handle.net/1721.1/82358"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"dc:rights.uri":["http://dspace.mit.edu/handle/1721.1/7582"],"dc:subject":["Electrical Engineering and Computer Science."],"dc:title":["Two-dimensional materials for ubiquitous electronics"],"dc:type":["Thesis"]},"updated_at":"2026-07-22T22:20:56Z"}