Comprehensive inverse modeling for the study of carrier transport models in sub-50nm MOSFETs

Direct quantitative 2-D characterization of sub-50 nm MOSFETs continues to be elusive. This research develops a comprehensive indirect inverse modeling technique for extracting 2-D device topology using combined log(I)-V and C-V data. An optimization loop minimizes the error between a broad range of simulated and measured electrical characteristics by adjusting parameterized profiles. The extracted profiles are reliable in that they exhibit decreased RMS error as the doping parameterization becomes increasingly comprehensive of doping features. The inverse modeling methodology pieces together complementary MOSFET data sets such as capacitance of the gate stack, 1-D doping analysis, subthreshold I-V which is a strong function of 2-D doping, and C-V data which is especially sensitive to the source/drain. Combining the data sets enhances the extracted profiles. Such profiles serve as a basis for tuning diffusion coefficients in order to realistically calibrate modern process simulators.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2002

Author dc:creator

• Djomehri, Ihsan Jahed, 1976-

Advisor dc:contributor.advisor

• Dimitri A. Antoniadis.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/8011

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/8011