On the 1/f noise of atomic-layer-deposition metal films

This thesis presents the measurement techniques and results of low-frequency noise for atomic-layer-deposition Pt films. Atomic-layer-deposition has been developed as an approach to make ultra-thin and conformal films. It has been employed to make detectors of bolometers. 1/f noise is a fundamental limit to the resolution. The experiments are designed to characterize the 1/f noise of the ALD fabricated Pt films. The measurement results show that for 7nm and 13nm ALD fabricated Pt films, 1/f noise is about two orders of magnitude larger than reported for continuous Pt films in literature. The thin film is also very likely to suffer from electromigration damage.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2012

Author dc:creator

• Wang, Xiawa

Advisor dc:contributor.advisor

• Aleksandar Kojic and James K. Roberge.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/77000

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/77000