Back to results

Massachusetts Institute of Technology

Characterization and analysis of process variability in deeply-scaled MOSFETs

Abstract

dc:description.abstract

Variability characterization and analysis in advanced technologies are needed to ensure robust performance as well as improved process capability. This thesis presents a framework for device variability characterization and analysis. Test structure and test circuit design, identification of significant effects in design of experiments, and decomposition approaches to quantify variation and its sources are explored. Two examples of transistor variability characterization are discussed: contact plug resistance variation within the context of a transistor, and AC, or short time-scale, variation in transistors. Results show that, with careful test structure and circuit design and ample measurement data, interesting trends can be observed. Among these trends are (1) a distinct within-die spatial signature of contact plug resistance and (2) a picosecond-accuracy delay measurement on transistors which reveals the presence of excessive external parasitic gate resistance. Measurement results obtained from these test vehicles can aid in both the understanding of variations in the fabrication process and in efforts to model variations in transistor behavior.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
2012

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Balakrishnan, Karthik, Ph. D. Massachusetts Institute of Technology
Advisor dc:contributor.advisor
  • Duane S. Boning.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/70787
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/70787

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Balakrishnan, Karthik, Ph. D. Massachusetts Institute of Technology. Characterization and analysis of process variability in deeply-scaled MOSFETs. Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/70787