Band-to-band tunneling in silicon diodes and tunnel transistors

This work studies the effect of mechanically applied uniaxial strain on reverse-bias band-to-band tunneling current in n+/p+ vertical silicon diodes fabricated on {100} and {110} substrate orientations. The Band Structure Lab and nextnano are used to analyze the change in band structure with uniaxial stress applied perpendicular to the tunneling direction along <100> and <110> crystal directions. A theoretical analysis based on the Wentzel-Kramers-Brillouin (WKB) approximation for tunneling probability combined with an uncoupled full-band Poisson equation solver and the calculated band structure changes is developed to model the experimental results. Reasonable agreement between experimental data and theoretical calculations is found when comparing the relative change in tunneling current at 1 V reverse-bias versus strain for different substrate orientation/strain configurations.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2010

Author dc:creator

• Teherani, James Towfik

Advisor dc:contributor.advisor

• Judy L. Hoyt and Dimitri A. Antoniadis.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/60215

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/60215