{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/46524"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/46524","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Near room temperature lithographically processed metal-oxide transistors","abstract":"A fully lithographic process at near-room-temperature was developed for the purpose of fabricating transistors based on metal-oxide channel materials. The combination of indium tin oxide (ITO) as the source/drain electrodes, zinc indium oxide (ZIO) as the semiconducting channel, and parylene as the dielectric was used to demonstrate the feasibility of such a low temperature lithographic process. 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