{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/46130"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/46130","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Choosing a gate dielectric for graphene based transistors","abstract":"Much attention has recently been focused on graphene as an alternative semiconductor to silicon. Transistors with graphene conduction channels have only recently been fabricated and their performance remains to be optimized. In this thesis, different candidate gate dielectric materials are examined for use in graphene transistors. Evaporated HfO2 is ultimately used as the gate dielectric for graphene field effect transistors (FETs) on six different graphene samples. Two types of graphene were used: graphene made from the sublimation of SiC and epitaxial graphene synthesized by chemical vapor deposition (CVD) onto nickel. Electrical performance of the graphene transistors were found to vary significantly depending on the local graphene microstructure. The gate dielectric was found to crack on thick regions of graphene but stay intact on thin regions. Dielectric charging resulted in hysteretic effects in device performance. As consistent with HfO2 used in silicon CMOS devices, electron mobilities were lower than hole mobilities in the fabricated graphene FETs.","abstract_html":"Much attention has recently been focused on graphene as an alternative semiconductor to silicon. Transistors with graphene conduction channels have only recently been fabricated and their performance remains to be optimized. In this thesis, different candidate gate dielectric materials are examined for use in graphene transistors. Evaporated HfO2 is ultimately used as the gate dielectric for graphene field effect transistors (FETs) on six different graphene samples. Two types of graphene were used: graphene made from the sublimation of SiC and epitaxial graphene synthesized by chemical vapor deposition (CVD) onto nickel. Electrical performance of the graphene transistors were found to vary significantly depending on the local graphene microstructure. The gate dielectric was found to crack on thick regions of graphene but stay intact on thin regions. Dielectric charging resulted in hysteretic effects in device performance. As consistent with HfO2 used in silicon CMOS devices, electron mobilities were lower than hole mobilities in the fabricated graphene FETs.","abstract_has_math":false,"creators":["Hsu, Pei-Lan, M. Eng. Massachusetts Institute of Technology"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.","school":null,"contributors":[],"advisors":["Jing Kong and Jakub Kedzierski."],"committee_chairs":[],"committee_members":[],"year":2008,"date_issued":"2008","date_published":"2008","updated_at":"2026-07-22T22:21:22Z","subjects":["Electrical Engineering and Computer Science."],"languages":["eng"],"rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"rights_urls":["http://dspace.mit.edu/handle/1721.1/7582"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1721.1/46130","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Jing Kong and Jakub Kedzierski."]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."]},{"key":"dc:contributor.other","label":"Dc Contributor Other","values":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."]},{"key":"dc:creator","label":"Author","values":["Hsu, Pei-Lan, M. Eng. Massachusetts Institute of Technology"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2009-06-30T17:24:03Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2009-06-30T17:24:03Z"]},{"key":"dc:date.issued","label":"Date","values":["2008"]},{"key":"dc:publisher","label":"Institution","values":["Massachusetts Institute of Technology"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Electrical Engineering and Computer Science."]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://dspace.mit.edu/handle/1721.1/7582"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1721.1/46130"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.","Includes bibliographical references (p. 91-97)."]},{"key":"dc:description.abstract","label":"Abstract","values":["Much attention has recently been focused on graphene as an alternative semiconductor to silicon. Transistors with graphene conduction channels have only recently been fabricated and their performance remains to be optimized. In this thesis, different candidate gate dielectric materials are examined for use in graphene transistors. Evaporated HfO2 is ultimately used as the gate dielectric for graphene field effect transistors (FETs) on six different graphene samples. Two types of graphene were used: graphene made from the sublimation of SiC and epitaxial graphene synthesized by chemical vapor deposition (CVD) onto nickel. Electrical performance of the graphene transistors were found to vary significantly depending on the local graphene microstructure. The gate dielectric was found to crack on thick regions of graphene but stay intact on thin regions. Dielectric charging resulted in hysteretic effects in device performance. As consistent with HfO2 used in silicon CMOS devices, electron mobilities were lower than hole mobilities in the fabricated graphene FETs."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["M.Eng."]},{"key":"dc:title","label":"Title","values":["Choosing a gate dielectric for graphene based transistors"]}]}],"canonical_facts":{"dc:contributor.advisor":["Jing Kong and Jakub Kedzierski."],"dc:contributor.department":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."],"dc:contributor.other":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."],"dc:creator":["Hsu, Pei-Lan, M. Eng. Massachusetts Institute of Technology"],"dc:date.accessioned":["2009-06-30T17:24:03Z"],"dc:date.available":["2009-06-30T17:24:03Z"],"dc:date.issued":["2008"],"dc:description":["Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.","Includes bibliographical references (p. 91-97)."],"dc:description.abstract":["Much attention has recently been focused on graphene as an alternative semiconductor to silicon. Transistors with graphene conduction channels have only recently been fabricated and their performance remains to be optimized. In this thesis, different candidate gate dielectric materials are examined for use in graphene transistors. Evaporated HfO2 is ultimately used as the gate dielectric for graphene field effect transistors (FETs) on six different graphene samples. Two types of graphene were used: graphene made from the sublimation of SiC and epitaxial graphene synthesized by chemical vapor deposition (CVD) onto nickel. Electrical performance of the graphene transistors were found to vary significantly depending on the local graphene microstructure. The gate dielectric was found to crack on thick regions of graphene but stay intact on thin regions. Dielectric charging resulted in hysteretic effects in device performance. As consistent with HfO2 used in silicon CMOS devices, electron mobilities were lower than hole mobilities in the fabricated graphene FETs."],"dc:description.degree":["M.Eng."],"dc:identifier.uri":["http://hdl.handle.net/1721.1/46130"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"dc:rights.uri":["http://dspace.mit.edu/handle/1721.1/7582"],"dc:subject":["Electrical Engineering and Computer Science."],"dc:title":["Choosing a gate dielectric for graphene based transistors"],"dc:type":["Thesis"]},"updated_at":"2026-07-22T22:21:22Z"}