{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/43075"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/43075","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Radio frequency dc-dc converters : device characterization, topology evaluation, and design","abstract":"High frequency power conversion is attractive for the opportunities it affords for improved performance. Dc-dc converters operating at high frequencies use smaller-valued energy storage elements, which tend to be physically smaller and lower-cost, and this can result in improved transient performance while retaining high efficiency. One way to achieve high switching frequencies is by using resonant inverter and rectifier topologies and regulating voltage via on-off control. This scheme requires a great deal of investigation of design practices appropriate to high frequency power conversion. The design issues were investigated for a 200 W 160-200 V input 33 V output converter. A comparison of resonant inverter topologies for the power stage was made. Appropriate devices were sought, compared, and characterized. A high frequency gate drive scheme for a large vertical MOSFET was developed. Several prototypes were built and these are also presented.","abstract_html":"High frequency power conversion is attractive for the opportunities it affords for improved performance. Dc-dc converters operating at high frequencies use smaller-valued energy storage elements, which tend to be physically smaller and lower-cost, and this can result in improved transient performance while retaining high efficiency. One way to achieve high switching frequencies is by using resonant inverter and rectifier topologies and regulating voltage via on-off control. This scheme requires a great deal of investigation of design practices appropriate to high frequency power conversion. The design issues were investigated for a 200 W 160-200 V input 33 V output converter. A comparison of resonant inverter topologies for the power stage was made. Appropriate devices were sought, compared, and characterized. A high frequency gate drive scheme for a large vertical MOSFET was developed. Several prototypes were built and these are also presented.","abstract_has_math":false,"creators":["Leitermann, Olivia"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.","school":null,"contributors":[],"advisors":["David J. Perreault."],"committee_chairs":[],"committee_members":[],"year":2008,"date_issued":"2008","date_published":"2008","updated_at":"2026-07-22T22:20:59Z","subjects":["Electrical Engineering and Computer Science."],"languages":["eng"],"rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"rights_urls":["http://dspace.mit.edu/handle/1721.1/7582"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1721.1/43075","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["David J. Perreault."]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."]},{"key":"dc:contributor.other","label":"Dc Contributor Other","values":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."]},{"key":"dc:creator","label":"Author","values":["Leitermann, Olivia"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2008-11-07T18:59:19Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2008-11-07T18:59:19Z"]},{"key":"dc:date.issued","label":"Date","values":["2008"]},{"key":"dc:publisher","label":"Institution","values":["Massachusetts Institute of Technology"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Electrical Engineering and Computer Science."]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://dspace.mit.edu/handle/1721.1/7582"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1721.1/43075"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.","Includes bibliographical references (p. 155-157)."]},{"key":"dc:description.abstract","label":"Abstract","values":["High frequency power conversion is attractive for the opportunities it affords for improved performance. Dc-dc converters operating at high frequencies use smaller-valued energy storage elements, which tend to be physically smaller and lower-cost, and this can result in improved transient performance while retaining high efficiency. One way to achieve high switching frequencies is by using resonant inverter and rectifier topologies and regulating voltage via on-off control. This scheme requires a great deal of investigation of design practices appropriate to high frequency power conversion. The design issues were investigated for a 200 W 160-200 V input 33 V output converter. A comparison of resonant inverter topologies for the power stage was made. Appropriate devices were sought, compared, and characterized. A high frequency gate drive scheme for a large vertical MOSFET was developed. Several prototypes were built and these are also presented."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["S.M."]},{"key":"dc:title","label":"Title","values":["Radio frequency dc-dc converters : device characterization, topology evaluation, and design"]}]}],"canonical_facts":{"dc:contributor.advisor":["David J. Perreault."],"dc:contributor.department":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."],"dc:contributor.other":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."],"dc:creator":["Leitermann, Olivia"],"dc:date.accessioned":["2008-11-07T18:59:19Z"],"dc:date.available":["2008-11-07T18:59:19Z"],"dc:date.issued":["2008"],"dc:description":["Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.","Includes bibliographical references (p. 155-157)."],"dc:description.abstract":["High frequency power conversion is attractive for the opportunities it affords for improved performance. Dc-dc converters operating at high frequencies use smaller-valued energy storage elements, which tend to be physically smaller and lower-cost, and this can result in improved transient performance while retaining high efficiency. One way to achieve high switching frequencies is by using resonant inverter and rectifier topologies and regulating voltage via on-off control. This scheme requires a great deal of investigation of design practices appropriate to high frequency power conversion. The design issues were investigated for a 200 W 160-200 V input 33 V output converter. A comparison of resonant inverter topologies for the power stage was made. Appropriate devices were sought, compared, and characterized. A high frequency gate drive scheme for a large vertical MOSFET was developed. Several prototypes were built and these are also presented."],"dc:description.degree":["S.M."],"dc:identifier.uri":["http://hdl.handle.net/1721.1/43075"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"dc:rights.uri":["http://dspace.mit.edu/handle/1721.1/7582"],"dc:subject":["Electrical Engineering and Computer Science."],"dc:title":["Radio frequency dc-dc converters : device characterization, topology evaluation, and design"],"dc:type":["Thesis"]},"updated_at":"2026-07-22T22:20:59Z"}