{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/42421"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/42421","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"Quantum-coupled single-electron thermal to electric conversion scheme","abstract":"A new thermal to electric conversion scheme based on an excitation transfer and tunneling mechanism is studied theoretically. Coulomb coupling dominates when the hot side and the cold side are very close. Two important concepts went into the device scheme: (1) Coulomb coupling, to try to increase throughput power (which is not subject to blackbody limit), and (2) a quantum dot implementation, to restrict number of states, to try to increase efficiency. Modeling efforts from Bloch equations, brute force numerical simulations, and the secular equations partitioning method are discussed. A hot-side quantum dot design of the device is considered. Alternative implementation where the hot-side is a plain sheet of metal or aluminum oxide is analyzed. We found that the model power/area is higher than the blackbody limit, and the predicted conversion efficiency is very high.","abstract_html":"A new thermal to electric conversion scheme based on an excitation transfer and tunneling mechanism is studied theoretically. Coulomb coupling dominates when the hot side and the cold side are very close. Two important concepts went into the device scheme: (1) Coulomb coupling, to try to increase throughput power (which is not subject to blackbody limit), and (2) a quantum dot implementation, to restrict number of states, to try to increase efficiency. Modeling efforts from Bloch equations, brute force numerical simulations, and the secular equations partitioning method are discussed. A hot-side quantum dot design of the device is considered. Alternative implementation where the hot-side is a plain sheet of metal or aluminum oxide is analyzed. We found that the model power/area is higher than the blackbody limit, and the predicted conversion efficiency is very high.","abstract_has_math":false,"creators":["Wu, Dennis M. (Dennis Meng-Jiao)"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.","school":null,"contributors":[],"advisors":["Peter L. Hagelstein."],"committee_chairs":[],"committee_members":[],"year":2008,"date_issued":"2008","date_published":"2008","updated_at":"2026-07-22T22:21:16Z","subjects":["Electrical Engineering and Computer Science."],"languages":["eng"],"rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"rights_urls":["http://dspace.mit.edu/handle/1721.1/7582"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1721.1/42421","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Peter L. Hagelstein."]},{"key":"dc:contributor.department","label":"Department","values":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."]},{"key":"dc:contributor.other","label":"Dc Contributor Other","values":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."]},{"key":"dc:creator","label":"Author","values":["Wu, Dennis M. 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They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://dspace.mit.edu/handle/1721.1/7582"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1721.1/42421"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Includes bibliographical references (p. 236-242).","Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2008."]},{"key":"dc:description.abstract","label":"Abstract","values":["A new thermal to electric conversion scheme based on an excitation transfer and tunneling mechanism is studied theoretically. Coulomb coupling dominates when the hot side and the cold side are very close. Two important concepts went into the device scheme: (1) Coulomb coupling, to try to increase throughput power (which is not subject to blackbody limit), and (2) a quantum dot implementation, to restrict number of states, to try to increase efficiency. Modeling efforts from Bloch equations, brute force numerical simulations, and the secular equations partitioning method are discussed. A hot-side quantum dot design of the device is considered. Alternative implementation where the hot-side is a plain sheet of metal or aluminum oxide is analyzed. We found that the model power/area is higher than the blackbody limit, and the predicted conversion efficiency is very high."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Ph.D."]},{"key":"dc:title","label":"Title","values":["Quantum-coupled single-electron thermal to electric conversion scheme"]}]}],"canonical_facts":{"dc:contributor.advisor":["Peter L. Hagelstein."],"dc:contributor.department":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."],"dc:contributor.other":["Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science."],"dc:creator":["Wu, Dennis M. (Dennis Meng-Jiao)"],"dc:date.accessioned":["2008-09-03T15:36:46Z"],"dc:date.available":["2008-09-03T15:36:46Z"],"dc:date.issued":["2008"],"dc:description":["Includes bibliographical references (p. 236-242).","Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2008."],"dc:description.abstract":["A new thermal to electric conversion scheme based on an excitation transfer and tunneling mechanism is studied theoretically. Coulomb coupling dominates when the hot side and the cold side are very close. Two important concepts went into the device scheme: (1) Coulomb coupling, to try to increase throughput power (which is not subject to blackbody limit), and (2) a quantum dot implementation, to restrict number of states, to try to increase efficiency. Modeling efforts from Bloch equations, brute force numerical simulations, and the secular equations partitioning method are discussed. A hot-side quantum dot design of the device is considered. Alternative implementation where the hot-side is a plain sheet of metal or aluminum oxide is analyzed. We found that the model power/area is higher than the blackbody limit, and the predicted conversion efficiency is very high."],"dc:description.degree":["Ph.D."],"dc:identifier.uri":["http://hdl.handle.net/1721.1/42421"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission."],"dc:rights.uri":["http://dspace.mit.edu/handle/1721.1/7582"],"dc:subject":["Electrical Engineering and Computer Science."],"dc:title":["Quantum-coupled single-electron thermal to electric conversion scheme"],"dc:type":["Thesis"]},"updated_at":"2026-07-22T22:21:16Z"}