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Massachusetts Institute of Technology

Low threshold vertical cavity surface emitting lasers integrated onto Si-CMOS ICs using novel hybrid assembly techniques

Abstract

dc:description.abstract

A new heterogeneous integration technique has been developed and demonstrated to integrate vertical cavity surface emitting lasers (VCSELs) on silicon CMOS integrated circuits for optical interconnect applications. Individual oxide-apertured 850 nm AlGaAs VCSEL micro-devices discs, 8 Ctm tall and 55 ptm in diameter (pills), have been both bonded and electrically contacted within the dielectric stack of a commercially-fabricated silicon integrated circuit. To accomplish this, fully processed VCSEL device pills are assembled within dielectric recesses using a vacuum pick up tool, and solder bonded in place using a method developed at M.I.T.. VCSELs device characteristic show threshold currents of 1 to 2.5 mA and thermal impedances as low as 1.6 OC/mW, similar to native substrate device impedances. This technique intimately connects devices within the dielectric stack, allowing for size independent, wafer scale monolithic processing of heterogeneous circuits. The size and placement of these devices prevent the stress build up that occurs in growth on non-native substrates due to thermal expansion mismatches. These same devices can be used in more parallel assembly techniques such as fluidic self-assembly and magnetically-assisted statistical assembly. Thermal modeling of these devices has also been preformed, investigating the impact of integration on VCSEL device operation. The results show potential thermal impedance improvements for both single and arrayed devices due to integration on silicon. This model also investigates the impact of integration on a dielectric stack, as well as the impact of the current aperture of the VCSEL device. This work also investigated the forces associated with magnetically-assisted statistical assembly.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
2007

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Perkins, James Michael, 1978-
Advisor dc:contributor.advisor
  • Clifton G. Fonstad.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/42235

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Perkins, James Michael, 1978-. Low threshold vertical cavity surface emitting lasers integrated onto Si-CMOS ICs using novel hybrid assembly techniques. Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/42235