Development of the recess mounting with monolithic metallization optoelectronic integrated circuit technology for optical clock distribution applications

Recess mounting with monolithic metallization, or RM3 integration, is used to integrate Ino.47Ga0.53As/InP based lattice-matched high quantum efficiency p-i-n photodetectors on silicon chips to build high performance optoelectronic integrated circuits [1]. In RM3 integration, partially processed heterostructure devices are placed in recesses formed in the dielectric layers covering the surface of an integrated circuit chip, the surface is planarized, and monolithic processing is continued to transform the heterostructures into optoelectronic devices monolithically integrated with the underlying electronic circuitry. Two different RM3 techniques have been investigated, Aligned Pillar Bonding (APB) and OptoPill Assembly (OPA). APB integrates lattice mismatched materials using aligned, selective area wafer bonding at reduced temperature (under 3500C), which protects the electronic chips from the adverse effects of high temperatures, and reduces the thermal expansion mismatch concerns. In the OPA technique, optoelectronic heterostructures are processed into circular pills of 8 gm height and 45 gm diameter, the pills are released from the substrate, and collected through a process that involves decanting.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2007

Author dc:creator

• Atmaca, Eralp, 1976-

Advisor dc:contributor.advisor

• Clifton G. Fonstad, Jr.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/38692

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/38692