{"id":{"repo_id":"mit","oai_identifier":"oai:dspace.mit.edu:1721.1/38306"},"canonical_url":"https://search.dev.ndltd.org/etd/mit/oai:dspace.mit.edu:1721.1/38306","repository":{"repo_id":"mit","name":"MIT","base_url":"https://dspace.mit.edu/oai/request"},"display":{"title":"A 77GHz power amplifier in silicon germanium BiCMOS technology","abstract":"The allocation of millimeter-wave frequencies has opened new possibilities for imaging applications such as vehicular radar and concealed weapons detection. Recent advances in silicon processes offer a new means of implementing cost-effective millimeter-wave integrated circuits, a field previously dominated by III-V semiconductors. By moving towards silicon, millimeter-wave circuits can achieve new levels of integration that were not possible when designed with III-V semiconductors. This thesis discusses the challenges and design of a 2-stage cascoded class-AB 77GHz power amplifier that could be used for imaging applications. Simulation results show a maximum output power of 20dBm, 26dB gain, and a maximum power-added efficiency (PAE) of 16%.","abstract_html":"The allocation of millimeter-wave frequencies has opened new possibilities for imaging applications such as vehicular radar and concealed weapons detection. Recent advances in silicon processes offer a new means of implementing cost-effective millimeter-wave integrated circuits, a field previously dominated by III-V semiconductors. By moving towards silicon, millimeter-wave circuits can achieve new levels of integration that were not possible when designed with III-V semiconductors. This thesis discusses the challenges and design of a 2-stage cascoded class-AB 77GHz power amplifier that could be used for imaging applications. Simulation results show a maximum output power of 20dBm, 26dB gain, and a maximum power-added efficiency (PAE) of 16%.","abstract_has_math":false,"creators":["Nguyen, Khoa Minh"],"institution":"Massachusetts Institute of Technology","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":"Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.","school":null,"contributors":[],"advisors":["Charles G. Sodini."],"committee_chairs":[],"committee_members":[],"year":2006,"date_issued":"2006","date_published":"2006","updated_at":"2026-07-22T22:20:55Z","subjects":["Electrical Engineering and Computer Science."],"languages":["eng"],"rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 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By moving towards silicon, millimeter-wave circuits can achieve new levels of integration that were not possible when designed with III-V semiconductors. This thesis discusses the challenges and design of a 2-stage cascoded class-AB 77GHz power amplifier that could be used for imaging applications. Simulation results show a maximum output power of 20dBm, 26dB gain, and a maximum power-added efficiency (PAE) of 16%."],"dc:description.degree":["S.M."],"dc:identifier.uri":["http://hdl.handle.net/1721.1/38306"],"dc:language.iso":["eng"],"dc:publisher":["Massachusetts Institute of Technology"],"dc:rights":["M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 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