Three dimensional integration technology using copper wafer bonding

With 3-D integration, the added vertical component could theoretically increase the device density per footprint ratio of a given chip by n-fold, provide a means of heterogeneous integration of devices fabricated from different technologies, and reduce the global RC delay to a non-factor in circuits by using smarter 3-D CAD tools for optimizing device placement. This thesis work will focus primarily on the development and realization of a viable 3-D flow fabricated within MTL. Specifically, the presentation will attempt on answering these questions in regards to 3-D: 1. What enabling technologies were needed for 3-D to work ? 2. Does it really work ? 3. Will the "3-D heat dissipation problem" prevent it from working ? 4. What applications is it good for ? Referring to the first item, a viable 3-D integration flow has been developed on both the wafer-and-die-level, and the enabling technologies were the following: Low temperature Cu-Cu thermocompression bonding, an aluminum-Cu based temporary laminate structure used stabilizing the handle wafer - SOI wafer bond, and tooling optimization of the die-die bonder setup in TRL.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2006

Author dc:creator

• Fan, Andy, 1976-

Advisor dc:contributor.advisor

• L. Rafael Reif and Akintunde Ibitayo Akinwande.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/37915
• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Identifier URI

http://dspace.mit.edu/handle/1721.1/37915

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/37915