Cell modulated DC/DC converter

A very high frequency converter roughly based on a class E topology is investigated for replacing a conventional boost converter circuit. The loss mechanisms in class E inverters are characterized, and metrics are developed to aid in device selection for high frequency converter. A (30 MHz) converter is developed based on a modified class E inverter, single diode rectifier, and cell modulation control architecture based on the Fairchild Semiconductor FDN361AN MOSFET identified by the device selection metrics. In addition to meeting the output specification of 1 W to 2 W, the converter has the ability to deliver up to 3W over its entire input voltage range of 3.6V to 7.2V. Converter efficiencies were realized ranging from from 71% to 81%. Finally, converter transient response to a 2:1 load step did not even exceed the transient ripple of the converter, approximately 100mV. Higher frequency design allowed for decreasing the magnitude of passive values, and in turn their corresponding physical size. Smaller magnitude components reduced the energy storage in the circuit, allowing for the improved transient response.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2005

Author dc:creator

• Warren, James Raymond, III

Advisor dc:contributor.advisor

• David J. Perreault and Timothy C. Neugebauer.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/37061

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/37061