Towards a cryogenic planar ion trap for Sr-88

This thesis describes experiments with ion traps constructed with electrodes in a single two-dimensional plane, and ion traps operated in a cryogenic environment at 77K and 4K temperatures. These two technologies address needs which arise in developing potentially scalable approaches to quantum computing using trapped ions. Traps with electrodes in a plane are challenging to load because their trap depths are usually only of order one percent that of multi-level traps of comparable dimensions. In addition, ion heating rates in these traps are higher than in multi-level traps because of the close proximity of the electrodes that is required to achieve a reasonable trap depth and the relatively resistive semiconductor electrode materials used in planar traps fabricated with standard semiconductor lithography methods. We investigate planar traps using macroscopic ions, focusing on devising techniques for loading these shallow traps and designing electrode layouts for ion movement. Using traps fabricated lithographically with copper traces on fiberglass laminate, we trap linear chains of tens of charged particles of [approx.] 400nm diameter in a rough vacuum of 15 Pa.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Physics.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2006

Author dc:creator

• Bakr, Waseem (Waseem S.)

Advisor dc:contributor.advisor

• Isaac L. Chuang.

• Physics.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/36134

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/36134