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Massachusetts Institute of Technology

The fabrication and market analysis of lattice mismatched devices

Abstract

dc:description.abstract

Lattice mismatched semiconductor substrates provide a platform for higher performance semiconductor devices. Through epitaxial growth on GaAs, the lattice constant of the film can be expanded resulting in a desired InxGalxAs film on which devices can be fabricated. The resulting device exhibits enhanced performance characteristics not achievable on the initial substrate. A self-aligned mesa structure process was developed to fabricate a prototype HBT device utilizing an InxGalxAs lattice mismatched semiconductor substrate. The self-aligned mesa process eliminated the need for complicated metal etch steps by using a lift-off process and deposited contact metal as an etch mask. Selecting etches that highlight the selectivity of the device layers was critical to the success of the process. In addition to developing a process to fabricate a device, a market analysis is performed of the possible application space of the technology and derived products. In assessing the feasibility of the possible products, two main areas were addressed, the markets and the competition within each market. The technology innovation has the ability to attract a variety of markets already served by compound semiconductors. The possible markets and the competition, companies and other materials, already serving the markets are identified and characterized. To determine what markets would be attractive, the full landscape of semiconductor applications is developed. After which we were able to list the specifications and customer needs of each application as well as what materials and what companies were serving these markets. The expected performance for the innovation was then benchmarked against what we projected for the current providers in each application space.

Degree

thesis:*
Department dc:contributor.department
Leaders for Manufacturing Program at MIT
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
2004

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • McGrath, John F. (John Francis), 1976-
Advisor dc:contributor.advisor
  • Eugene A. Fitzgerald.

Subjects

dc:subject × 3

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/34739
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/34739

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

McGrath, John F. (John Francis), 1976-. The fabrication and market analysis of lattice mismatched devices. Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/34739