Massachusetts Institute of Technology
A study of plasma etching for use on active metals
Abstract
dc:description.abstractActive metals can be used as a getter pump, removing impurities in ultra-pure high vacuum environments. To relieve the difficulties involved with the transportation, storage and handling of these metals, a process is being developed to create a protective coating by removing the active metal component from the surface of a mixture of the active metal and a stable element via immersion in a wet chemical bath. It is the purpose of this thesis to investigate the utility of a plasma etching process in the removal of the active metal. A decision tree for the selection of a suitable etchant gas was developed and experiments were conducted to validate the process. Magnesium coated glass slides were etched with chlorine, fluorine, and fluorocarbon gasses alone and in the presence of argon to determine which chemistry would etch the fastest. Magnesium was chosen because it was the easiest to handle among the active metals. It was determined that chlorine gas with argon provided the highest etch rate. Next, a set of factorial experiments were conducted to determine the sensitivity of the etch process to changing radio frequency power input, chamber pressure, and the ratio of chlorine to argon.
Degree
thesis:*- Department dc:contributor.department
- Massachusetts Institute of Technology. Dept. of Mechanical Engineering.
- Grantor dc:publisher
- Massachusetts Institute of Technology
- Year dc:date.issued
- 2005
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Nishimoto, Keane T. (Keane Takeshi), 1981-
- Advisor dc:contributor.advisor
-
- Jung-Hoon Chun.
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
- Licence dc:rights.uri
- Language dc:language.iso
- eng
Identifiers
dc:identifier.*- Handle dc:identifier.uri
- http://hdl.handle.net/1721.1/33914
- OAI identifier oai:identifier
- oai:dspace.mit.edu:1721.1/33914