Characterization of organic field effect transistors for OLED displays

This thesis explores the characterization of OFETs that will aid the circuit design of OLED pixel drivers. The contact resistance, flat band voltage, and mobility are extracted from top contact and bottom contact transistors with current-voltage (I-V) and low frequency capacitance-voltage (C-V) measurements. Extraction of contact resistance is found to be crucial in characterization of bottom-contact transistors as it obscures mobility extraction. An unambiguous method of extracting flat band voltage is explored and mobility is extracted with minimal assumptions by separation of charge and mobility from C-V measurements. Mobility is found to increase with gate voltage differing significantly from mobility dependence in crystal silicon MOSFETs.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2005

Author dc:creator

• Ryu, Kyungbum

Advisor dc:contributor.advisor

• Charles G. Sodini and Vladimir Bulović.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/33853

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/33853