Red emitting photonic devices using InGaP/InGaAlP material system

In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs substrate. The devices consist of a quantum well active region and a distributed bragg reflector at the bottom to reduce loss of emitted light into the substrate. The first device emits at a wavelength of 650 nm and is intended to create a photonic crystal light emitting diode (PCLED). PCLEDs have been demonstrated to have higher efficiency compared to devices without the photonic crystal. The second device emits at 690 nm and is intended for integrating with an organic semiconductor to form a hybrid organic-inorganic emitter. The devices were grown using gas source molecular beam epitaxy (GSMBE) and then processed to form the final device. .

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2005

Author dc:creator

• Kangude, Yamini

Advisor dc:contributor.advisor

• Leslie A. Kolodziejski.

• Materials Science and Engineering.
• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/33395

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/33395