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Massachusetts Institute of Technology

Fabrication and characterization of wafer-level gold thermocompression bonding

Abstract

dc:description.abstract

Packaging is an important aspect of microelectromechanical systems (MEMS) design. As MEMS devices traverse multiple energy domains, sometimes operating in hostile conditions, the need to maintain reliability and functionality makes packaging a challenging problem. Often, the package needs to be specially designed for each device. Given the typically low volume productions, the packaging cost can often exceed the device cost. One way to lower that cost is to package at the wafer-level. This thesis explores a low temperature wafer bonding technique: thermocompression bonding. This technique relies on the applied pressure and temperature to forge a bond. The pressure brings two surfaces into close proximity while the temperature reduces the pressure requirement to deform the surface asperities. In this work, gold thin film was used to bond two silicon substrates. The thesis discusses the fabrication process, its associated challenges, and provides guidelines to achievesuccessful bonding. Characterization of the process focused mainly on the effects of bonding temperature (260 to 300° C), pressure (1.25 to 120 MPa) and time (2 to 90 min). The resultant bond was quantified using a four-point bend-delamination technique. High bond toughness was obtained and the bond quality was found to improve with increases in the bond temperature and pressure. However, non-uniform bonding was observed. Using finite element analysis, correlation between the mask layout and non-uniform pressure distribution was found. The four-point bend-delamination technique was also evaluated for its effectiveness in measuring high toughness bonds. Non-ideality in the load-displacement behavior were observed due to the variation in the bond toughness. A cohesive zone model was used to model the fracture process. The finite element results showed qualitative agreement with experimental data. The results also indicated that the technique is not well suited for bonds with large variations in bond toughness.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
2003

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Tsau, Christine H. (Christine Hsin-Hwa), 1976-
Advisor dc:contributor.advisor
  • Martin A. Schmidt and S. Mark Spearing.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/29975
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/29975

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Tsau, Christine H. (Christine Hsin-Hwa), 1976-. Fabrication and characterization of wafer-level gold thermocompression bonding. Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/29975