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Massachusetts Institute of Technology

Nanometer-precision electron-beam lithography with applications in integrated optics

Abstract

dc:description.abstract

Scanning electron-beam lithography (SEBL) provides sub-10-nm resolution and arbitrary-pattern generation; however, SEBL's pattern-placement accuracy remains inadequate for future integrated-circuits and integrated-optical devices. Environmental disturbances, system imperfections, charging, and a variety of other factors contribute to pattern-placement inaccuracy. To overcome these limitations, spatial-phase locked electron-beam lithography (SPLEBL) monitors the beam location with respect to a reference grid on the substrate. Phase detection of the periodic grid signal provides feedback control of the beam position to within a fraction of the period. Using this technique we exposed patterns globally locked to a fiducial grid and reduced local field-stitching errors to a < 1.3 nm. Spatial-phase locking is particularly important for integrated-optical devices that require pattern-placement accuracy within a fraction of the wavelength of light. As an example, Bragg-grating based optical filters were fabricated in silicon-on-insulator waveguides using SPLEBL. The filters were designed to reflect a narrow-range of wavelengths within the communications band near 1550-nm. We patterned the devices in a single lithography step by placing the gratings in the waveguide sidewalls. This design allows apodization of the filter response by lithographically varying the grating depth. Measured transmission spectra show greatly reduced sidelobe levels for apodized devices compared to devices with uniform gratings.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
2003

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Hastings, Jeffrey Todd, 1975-
Advisor dc:contributor.advisor
  • Henry I. Smith.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/29949
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/29949

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Hastings, Jeffrey Todd, 1975-. Nanometer-precision electron-beam lithography with applications in integrated optics. Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/29949